Datasheet > STD4NK100Z

STD4NK100Z

更新时间： 2023-12-20 18:46:24

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	435K
描述
汽车级N沟道1000 V、5.6 Ohm典型值、2.2 A有齐纳管保护的SuperMESH功率MOSFET，DPAK封装

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STD4NK100Z 数据手册

STD4NK100Z

Datasheet

Automotive-grade N-channel 1000 V, 5.4 Ω typ., 2.2 A SuperMESH

Power MOSFET in a DPAK package

Features

DS(on)

max.

Order code

TAB

STD4NK100Z

1000 V

6.8 Ω

2.2 A

DPAK

•

AEC-Q101 qualified

100% avalanche tested

Gate charge minimized

Very low intrinsic capacitance

Zener-protected

D(2, TAB)

G(1)

Applications

•

Switching applications

S(3)

AM01476v1_tab

Description

This high-voltage device is a Zener-protected N-channel Power MOSFET developed

using the SuperMESH technology by STMicroelectronics, an optimization of the well-

established PowerMESH. In addition to a significant reduction in on-resistance, this

device is designed to ensure a high level of dv/dt capability for the most demanding

applications.

Product status link

STD4NK100Z

Product summary⁽¹⁾

Order code

STD4NK100Z

Marking

Package

Packing

4NK100Z

DPAK

Tape and reel

1. The HTRB test was performed at

80% V in compliance with AEC-

(BR)DSS

Q101 rev. C. All the other tests were

performed according to rev. D.

DS8902 - Rev 3 - April 2023

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...15

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STD4NK50	STMICROELECTRONICS	获取价格	N-CHANNEL 500V - 2.4ohm - 3A TO-220/TO-220FP/
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STD4NK50ZD	STMICROELECTRONICS	获取价格	N-channel 500V - 2.4ヘ - 3A - TO-220 - TO-220F
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STD4NK80Z-1	STMICROELECTRONICS	获取价格	N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DP