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2SK3294 PDF预览

2SK3294

更新时间: 2024-09-28 06:23:35
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科信 - KEXIN /
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描述
MOS Field Effect Transistor

2SK3294 数据手册

  
SMD Type  
MOSFET  
MOS Field Effect Transistor  
2SK3294  
TO-263  
Unit: mm  
Features  
+0.2  
4.57  
-0.2  
+0.1  
1.27  
-0.1  
Gate voltage rating 30 V  
Low on-state resistance  
RDS(on) = 160 m MAX. (VGS = 10 V, ID = 10 A)  
Low input capacitance  
+0.1  
-0.1  
0.1max  
1.27  
Ciss = 1500 pF TYP. (VDS = 10 V, VGS = 0 V)  
Avalanche capability rated  
+0.1  
0.81  
-0.1  
2.54  
1 Gate  
+0.2  
2.54  
-0.2  
+0.1  
5.08  
-0.1  
+0.2  
0.4  
-0.2  
Built-in gate protection diode  
2 Drain  
3 Source  
Surface mount device available  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
250  
30  
Unit  
V
Gate to source voltage  
V
A
20  
Drain current  
Idp *  
A
60  
100  
1.5  
Power dissipation  
TC=25  
TA=25  
PD  
W
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* PW 10 s,Duty Cycle 1%  
Electrical Characteristics Ta = 25  
Parameter  
Drain cut-off current  
Gate leakage current  
Gat cutoff voltage  
Symbol  
Testconditons  
VDS=250V,VGS=0  
Min  
Typ  
Max  
100  
10  
Unit  
A
IDSS  
IGSS  
VGS(off)  
Yfs  
VGS= 30V,VDS=0  
VDS=10V,ID=1mA  
VDS=10V,ID=10A  
VGS=10V,ID=10A  
A
2.5  
6.0  
4.5  
V
Forward transfer admittance  
Drain to source on-state resistance  
Input capacitance  
S
RDS(on)  
Ciss  
Coss  
Crss  
ton  
120  
1500  
360  
220  
24  
160  
m
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=10V,VGS=0,f=1MHZ  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
tr  
78  
ID=10A,VGS(on)=10V,RG=10  
,VDD=125V  
Turn-off delay time  
Fall time  
toff  
110  
60  
tf  
1
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