Datasheet > STD52P3LLH6

STD52P3LLH6

更新时间： 2024-11-25 14:57:35

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
15页	550K
描述
P沟道30 V、0.01 Ohm典型值、52 A STripFET H6功率MOSFET，DPAK封装

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STD52P3LLH6 数据手册

STD52P3LLH6

Datasheet

P-channel 30 V, 10 mΩ typ., 52 A, STripFET H6 Power MOSFET

in a DPAK package

Features

DS(on)

max

TOT

Order codes

DSS

TAB

STD52P3LLH6

30 V

12 mΩ

52 A

70 W

•

Very low on-resistance

Very low gate charge

DPAK

High avalanche ruggedness

Low gate drive power loss

D(2, TAB)

Applications

•

Switching applications

G(1)

Description

This device is a P-channel Power MOSFET developed using the STripFET H6

technology with a new trench gate structure. The resulting Power MOSFET exhibits

very low R_DS(on)in all packages.

S(3)

AM11258v1

Product status link

STD52P3LLH6

Product summary

Order code

STD52P3LLH6

Marking

Package

Packing

52P3LLH6

DPAK

Tape and reel

Note: For the P-channel Power

MOSFETs the actual polarity of the

voltages and the current must be

reversed.

DS10148 - Rev 3 - February 2020

www.st.com

For further information contact your local STMicroelectronics sales office.

12 3 4 5 6 7...15

中文翻译

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