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STD5407N PDF预览

STD5407N

更新时间： 2024-01-21 09:43:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
6页 82K
描述
Power MOSFET

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中文翻译

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STD5407N 数据手册

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NTD5407N, STD5407N,  
NVD5407N  
Power MOSFET  
40 V, 38 A, Single N−Channel, DPAK  
Features  
• Low R  
DS(on)  
www.onsemi.com  
• High Current Capability  
• Low Gate Charge  
I
MAX  
D
• STD Prefix for Automotive and Other Applications Requiring  
Unique Site and Control Change Requirements; AEC−Q101  
Qualified and PPAP Capable*  
V
R
TYP  
DS(ON)  
(Note 1)  
(BR)DSS  
40 V  
21 mꢂ @ 10 V  
38 A  
• These Devices are Pb−Free and are RoHS Compliant  
N−Channel  
Applications  
4
D
• Electronic Brake Systems  
• Electronic Power Steering  
• Bridge Circuits  
2
1
3
DPAK  
G
CASE 369C  
STYLE 2  
MAXIMUM RATINGS (T = 25°C unless otherwise stated)  
J
Parameter  
Drain−to−Source Voltage  
Symbol  
Value  
40  
Unit  
V
S
V
DSS  
MARKING DIAGRAM  
Gate−to−Source Voltage  
V
GS  
20  
V
1
Continuous Drain  
Current − R  
T
= 25°C  
= 100°C  
= 25°C  
I
38  
A
C
D
AYWW  
54  
07NG  
Steady  
State  
ꢀ
JC  
T
C
27  
Power Dissipation −  
R
Steady  
State  
T
C
P
75  
W
A
D
ꢀ
JC  
A
Y
= Assembly Location*  
= Year  
= Work Week  
= Specific Device Code  
= Pb−Free Device  
Continuous Drain  
Current R (Note 1)  
Steady  
State  
T = 25°C  
A
I
D
7.6  
5.3  
2.9  
WW  
5407N  
G
ꢀ
JA  
T = 100°C  
A
Power Dissipation −  
(Note 1)  
Steady  
State  
T = 25°C  
A
P
W
D
R
ꢀ
JA  
* The Assembly Location code (A) is front side  
optional. In cases where the Assembly Location is  
stamped in the package, the front side assembly  
code may be blank.  
Pulsed Drain Current  
t = 10 ꢁ s  
I
75  
A
p
DM  
Operating Junction and Storage Temperature  
T ,  
STG  
−55 to  
175  
°C  
J
T
Source Current (Body Diode)  
I
36  
A
S
ORDERING INFORMATION  
Single Pulse Drain−to Source Avalanche  
EAS  
150  
mJ  
Device  
Package  
Shipping†  
Energy − (V = 50 V, V = 10 V, I = 17 A,  
DD  
GS  
PK  
L = 1 mH, R = 25 ꢂ)  
G
NTD5407NT4G  
DPAK  
(Pb−Free)  
2500 / Tape &  
Reel  
Lead Temperature for Soldering Purposes  
(1/8” from case for 10 s)  
260  
°C  
T
L
STD5407NT4G*  
NVD5407NT4G*  
DPAK  
(Pb−Free)  
2500 / Tape &  
Reel  
Stresses exceeding those listed in the Maximum Ratings table may damage the  
device. If any of these limits are exceeded, device functionality should not be  
assumed, damage may occur and reliability may be affected.  
DPAK  
(Pb−Free)  
2500 / Tape &  
Reel  
THERMAL RESISTANCE RATINGS (Note 1)  
†For information on tape and reel specifications,  
including part orientation and tape sizes, please  
refer to our Tape and Reel Packaging Specifications  
Brochure, BRD8011/D.  
Parameter  
Junction−to−Case (Drain)  
Junction−to−Ambient (Note 1)  
Symbol  
Max  
2.0  
52  
Unit  
°C/W  
°C/W  
R
R
θ
JC  
JA  
θ
1. Surface mounted on FR4 board using 1 sq in pad size,  
(Cu Area 1.127 sq in [2 oz] including traces).  
© Semiconductor Components Industries, LLC, 2014  
1
Publication Order Number:  
October, 2016 − Rev. 7  
NTD5407N/D  
 
123456

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