是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | TO-252 |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 3 |
Reach Compliance Code: | not_compliant | ECCN代码: | EAR99 |
风险等级: | 5.84 | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 24 V |
最大漏极电流 (Abs) (ID): | 55 A | 最大漏极电流 (ID): | 55 A |
最大漏源导通电阻: | 0.014 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 175 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 60 W | 最大脉冲漏极电流 (IDM): | 220 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STD55NH2LL | STMICROELECTRONICS |
获取价格 |
N-channel 24V - 0.010ohm - 40A - DPAK/IPAK Ultra low gate charge STripFET TM Power MOSFET |
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STD55NH2LL_06 | STMICROELECTRONICS |
获取价格 |
N-channel 24V - 0.010ohm - 40A - DPAK/IPAK Ultra low gate charge STripFET TM Power MOSFET |
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STD55NH2LL-1 | STMICROELECTRONICS |
获取价格 |
N-channel 24V - 0.010ohm - 40A - DPAK/IPAK Ultra low gate charge STripFET TM Power MOSFET |
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STD55NH2LLT4 | STMICROELECTRONICS |
获取价格 |
N-channel 24V - 0.010ohm - 40A - DPAK/IPAK Ultra low gate charge STripFET TM Power MOSFET |
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STD5915 | AUK |
获取价格 |
NPN Silicon Power Transistor |
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STD5915 | KODENSHI |
获取价格 |
NPN Silicon Power Transistor |
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STD5KA10 | SSDI |
获取价格 |
UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR |
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STD5KA100 | SSDI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO |
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STD5KA100R | SSDI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO |
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STD5KA100RS | SSDI |
获取价格 |
Trans Voltage Suppressor Diode, 5000W, 100V V(RWM), Unidirectional, 1 Element, Silicon, DO |
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