品牌 | Logo | 应用领域 |
意法半导体 - STMICROELECTRONICS | ![]() |
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页数 | 文件大小 | 规格书 |
16页 | 760K | ![]() |
描述 | ||
N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D2PAK/I2PAK Zener-Protected SuperMESH⑩Power MOSFET |
是否Rohs认证: | 符合 | 生命周期: | Active |
零件包装代码: | TO-251 | 包装说明: | IN-LINE, R-PSIP-T3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 1.68 |
雪崩能效等级(Eas): | 120 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (Abs) (ID): | 4 A |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-251 |
JESD-30 代码: | R-PSIP-T3 | JESD-609代码: | e3 |
湿度敏感等级: | 1 | 元件数量: | 1 |
端子数量: | 3 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | IN-LINE |
峰值回流温度(摄氏度): | 260 | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 70 W | 最大脉冲漏极电流 (IDM): | 16 A |
认证状态: | Not Qualified | 子类别: | FET General Purpose Power |
表面贴装: | NO | 端子面层: | Matte Tin (Sn) - annealed |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | 30 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
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STD4NK60ZT4 | STMICROELECTRONICS |
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N-channel 600 V, 1.76 Ω, 4 A SuperMESH⢠Po |
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STD4NK80Z | STMICROELECTRONICS |
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N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DP |
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STD4NK80Z-1 | STMICROELECTRONICS |
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N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DP |
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STD4NK80ZT4 | STMICROELECTRONICS |
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N-channel 800V - 3ヘ - 3A - TO-220/TO-220FP/DP |
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STD4NS25 | STMICROELECTRONICS |
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N-CHANNEL 250V - 0.9ohm - 4A DPAK/IPAK MESH O |
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STD4NS25-1 | STMICROELECTRONICS |
获取价格 |
4A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3 |
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STD4NS25T4 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4A I(D) | TO-252AA |
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STD5025NLS | SAMHOP |
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N-Channel Logic Level E nhancement Mode Field Effect Transistor |
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STD50N03L | STMICROELECTRONICS |
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N-CHANNEL 30V - 9.2mohm - 40A - DPAK/IPAK STripFET TM III Power MOSFET |
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STD50N03L-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 30V - 9.2mohm - 40A - DPAK/IPAK STripFET TM III Power MOSFET |
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