Datasheet > STD4NS25

STD4NS25

更新时间： 2024-01-19 04:26:39

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描述
N-CHANNEL 250V - 0.9ohm - 4A DPAK/IPAK MESH OVERLAY⑩ MOSFET

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STD4NS25 数据手册

STD4NS25

N-CHANNEL 250V - 0.9Ω - 4A DPAK/IPAK

MESH OVERLAY™ MOSFET

TYPE

DSS

DS(on)

STD4NS25

250 V

< 1.1 Ω

4 A

■

TYPICAL R (on) = 0.9 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

DPAK

TO-252

IPAK

DESCRIPTION

TO-251

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performance. The new patented STrip layout cou-

pled with the Company’s proprietary edge termina-

tion structure, makes it suitable in coverters for

lighting applications.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-DC CONVERTERS FOR TELECOM,

INDUSTRIAL, AND LIGHTING EQUIPMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

Drain-source Voltage (V = 0)

250

Drain-gate Voltage (R = 20 kΩ)

250

DGR

Gate- source Voltage

± 20

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

2.5

(●)

Drain Current (pulsed)

Total Dissipation at T = 25°C

0.4

TOT

Derating Factor

W/°C

V/ns

°C

dv/dt (1)

Peak Diode Recovery voltage slope

Storage Temperature

–65 to 150

150

stg

Max. Operating Junction Temperature

(1) I ≤ 4A, di/dt≤300 A/µs, V ≤ V

, Tj≤T

(BR)DSS jMAX

(•)Pulse width limited by safe operating area

February 2001

1/9

12 3 4 5 6 7...9

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