5秒后页面跳转
STD4NK80ZT4 PDF预览

STD4NK80ZT4

更新时间: 2024-09-30 04:01:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
18页 547K
描述
N-channel 800V - 3ヘ - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH⑩ MOSFET

STD4NK80ZT4 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.64Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:180131
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:TO-XXX (Inc. DPAK)Samacsys Footprint Name:DPAK (TO-252)_2
Samacsys Released Date:2015-07-12 18:13:02Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):190 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:800 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:3.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252AAJESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):80 W
最大脉冲漏极电流 (IDM):12 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn) - annealed端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:30
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD4NK80ZT4 数据手册

 浏览型号STD4NK80ZT4的Datasheet PDF文件第2页浏览型号STD4NK80ZT4的Datasheet PDF文件第3页浏览型号STD4NK80ZT4的Datasheet PDF文件第4页浏览型号STD4NK80ZT4的Datasheet PDF文件第5页浏览型号STD4NK80ZT4的Datasheet PDF文件第6页浏览型号STD4NK80ZT4的Datasheet PDF文件第7页 
STP4NK80Z - STP4NK80ZFP  
STD4NK80Z - STD4NK80Z-1  
N-channel 800V - 3- 3A - TO-220/TO-220FP/DPAK/IPAK  
Zener - Protected SuperMESH™ MOSFET  
General features  
VDSS  
(@Tjmax)  
Type  
RDS(on)  
ID  
3
2
STP4NK80Z  
STP4NK80ZFP  
STD4NK80Z  
800 V  
800 V  
800 V  
800 V  
< 3.5 Ω  
< 3.5 Ω  
< 3.5 Ω  
< 3.5 Ω  
3 A  
3 A  
3 A  
3 A  
1
TO-220  
TO-220FP  
STD4NK80Z-1  
Extremely high dv/dt capability  
100% avalanche tested  
3
3
2
1
1
DPAK  
IPAK  
Gate charge minimized  
Very low intrinsic capacitances  
Very good manufacturing repeatibility  
Internal schematic diagram  
Description  
The SuperMESH™ series is obtained through an  
extreme optimization of ST’s well established  
strip-based PowerMESH™ layout. In addition to  
pushing on-resistance significantly down, special  
care is taken to ensure a very good dv/dt  
capability for the most demanding applications.  
Such series complements ST full range of high  
voltage MOSFETs including revolutionary  
MDmesh™ products.  
Applications  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STP4NK80Z  
STP4NK80ZFP  
STD4NK80ZT4  
STD4NK80Z-1  
P4NK80Z  
P4NK80ZFP  
D4NK80Z  
TO-220  
TO-220FP  
DPAK  
Tube  
Tube  
Tape & reel  
Tube  
D4NK80Z  
IPAK  
August 2006  
Rev 8  
1/18  
www.st.com  
18  

STD4NK80ZT4 替代型号

型号 品牌 替代类型 描述 数据表
STD4NK80Z-1 STMICROELECTRONICS

完全替代

N-CHANNEL 800V - 3ohm - 3A TO-220/TO-220FP/DP

与STD4NK80ZT4相关器件

型号 品牌 获取价格 描述 数据表
STD4NS25 STMICROELECTRONICS

获取价格

N-CHANNEL 250V - 0.9ohm - 4A DPAK/IPAK MESH O
STD4NS25-1 STMICROELECTRONICS

获取价格

4A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3
STD4NS25T4 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4A I(D) | TO-252AA
STD5025NLS SAMHOP

获取价格

N-Channel Logic Level E nhancement Mode Field Effect Transistor
STD50N03L STMICROELECTRONICS

获取价格

N-CHANNEL 30V - 9.2mohm - 40A - DPAK/IPAK STripFET TM III Power MOSFET
STD50N03L-1 STMICROELECTRONICS

获取价格

N-CHANNEL 30V - 9.2mohm - 40A - DPAK/IPAK STripFET TM III Power MOSFET
STD50NH02L STMICROELECTRONICS

获取价格

N-CHANNEL 24V - 0.0085 ohm - 50A DPAK/IPAK ST
STD50NH02L_06 STMICROELECTRONICS

获取价格

N-channel 24V - 0.0085ohm - 50A - DPAK/IPAK STripFET TM III Power MOSFET
STD50NH02L-1 STMICROELECTRONICS

获取价格

N-channel 24V - 0.0085ohm - 50A - DPAK/IPAK STripFET TM III Power MOSFET
STD50NH02LT4 STMICROELECTRONICS

获取价格

N-channel 24V - 0.0085ohm - 50A - DPAK/IPAK STripFET TM III Power MOSFET