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MB10S PDF预览

MB10S

更新时间: 2024-11-04 18:04:43
品牌 Logo 应用领域
RECTRON /
页数 文件大小 规格书
6页 169K
描述
Reverse Voltage Vr : 1000 V;Forward Current Io : 0.5 A;Max Surge Current : 30 A;Forward Voltage Vf : 1.05 V;Reverse Current Ir : 0.5 uA;Recovery Time :;Package / Case : MD-S;Mounting Style : SMD/SMT;Notes : MD-S,0.8A,1000V,SMD Bridge

MB10S 技术参数

生命周期:Active包装说明:R-PDSO-G4
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.55Is Samacsys:N
其他特性:UL LISTED最小击穿电压:1000 V
配置:BRIDGE, 4 ELEMENTS二极管元件材料:SILICON
二极管类型:BRIDGE RECTIFIER DIODEJESD-30 代码:R-PDSO-G4
最大非重复峰值正向电流:30 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:0.5 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
最大重复峰值反向电压:1000 V表面贴装:YES
端子形式:GULL WING端子位置:DUAL
Base Number Matches:1

MB10S 数据手册

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MB1S  
THRU  
MB10S  
SINGLE-PHASE GLASS PASSIVATED  
SILICON BRIDGE RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.5 Ampere  
FEATURES  
* Surge overload rating - 30 amperes peak  
* Ideal for printed circuit board  
* Reliable low cost construction utilizing molded  
* Glass passivated device  
* Polarity symbols molded on body  
* Mounting position: Any  
* MSL: Level 1  
MD-S  
MECHANICAL DATA  
1
2
3
4
* Epoxy: Device has UL flammability classification 94V-O  
* UL listed under the recognized component directory, file #E94233.  
0.028(0.9)  
0.020(0.5)  
.004(0.10) MAX.  
0.108(2.74)  
0.092(2.34)  
0.193(4.9)  
0.177(4.5)  
0.106(2.7)  
0.091(2.3)  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
0.014(0.35)  
0.006(0.15)  
0.193(4.9)  
0.177(4.5)  
Dimensions in inches and (millimeters)  
MAXIMUM RATINGS (At T = 25oC unless otherwise noted)  
A
RATINGS  
SYMBOL  
VRRM  
MB1S  
50  
MB2S  
100  
MB3S  
200  
MB4S  
400  
MB6S  
600  
MB8S  
800  
MB10S UNITS  
1000  
700  
Volts  
Volts  
Maximum Recurrent Peak Reverse Voltage  
VRMS  
35  
50  
70  
140  
200  
280  
420  
600  
560  
800  
Maximum RMS Bridge Input Voltage  
Maximum DC Blocking Voltage  
Maximum Average Forward Output Current at T = 40oC  
A
VDC  
IO  
100  
400  
0.5  
1000  
Volts  
Amps  
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
IFSM  
30  
Amps  
R
R
θ
θ
J A  
J L  
85  
20  
0C/W  
0 C  
Typical Thermal Resistance (Note 2)  
Operating and Storage Temperature Range  
T
J,  
T
STG  
-55 to + 150  
ELECTRICAL CHARACTERISTICS (At T = 25oC unless otherwise noted)  
A
CHARACTERISTICS  
SYMBOL  
VF  
MB1S  
MB2S  
MB3S  
MB4S  
1.05  
MB6S  
MB8S  
MB10S UNITS  
Volts  
Maximum Forward Voltage Drop per Bridge  
Element at 0.5A DC  
@TA = 25oC  
@TA = 125oC  
μAmps  
Maximum Reverse Current at Rated  
5.0  
0.5  
IR  
DC Blocking Voltage per element  
mAmps  
Note: 1.”ROHS compliant”  
2019-08  
REV:B  
2. Thermal Resistance: PCB mounted.  

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