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ZVP4424Z PDF预览

ZVP4424Z

更新时间: 2024-11-18 18:09:27
品牌 Logo 应用领域
合科泰 - HOTTECH /
页数 文件大小 规格书
5页 500K
描述
SOT-89

ZVP4424Z 数据手册

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ZVP4424Z  
HIGH VOLTAGE MOSFET (P-CHANNEL)  
FEATURES  
VDS=-240V,RDS(ON)≤9Ω@VGS=-10V,ID=-200mA  
Low threshold and Fast switching  
For Electronic hook switches applications  
For Telecoms and Battery powered equipment applications  
Complementary Type - ZVN4424Z  
Surface Mount device  
SOT-89  
MECHANICAL DATA  
Case: SOT-89  
Case Material: Molded Plastic. UL flammability  
Classification Rating: 94V-0  
Weight: 0.055 grams (approximate)  
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)  
Parameter  
Symbol  
VDS  
Value  
-240  
Unit  
V
Drain-source voltage  
VGS  
Gate-source voltage  
±40  
V
ID  
Continuous drain current  
Pulsed drain current  
-200  
mA  
A
IDM  
-1.0  
Power dissipation  
PD*  
1
W
°C  
TJ,TSTG  
Operating and Storage temperature  
-55 ~+150  
Note: *:recommended PD calculated using FR4 measuring 15x15x0.6mm  
Refer to the handling instructions for soldering surface mount components.  
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)  
Parameter  
Symbol Min Typ Max Unit  
Conditions  
V(BR)DSS  
VGS(th)  
IGSS  
Drain-Source breakdown voltage  
Gate-threshold voltage  
-240  
V
V
VGS=0V, ID=-1mA  
VDS=VGS, ID=-1mA  
-0.7 -1.4  
-2.0  
-100  
-10  
VDS=0V,  
Gate-body leakage current  
nA  
μA  
μA  
A
VGS=±40V  
VDS=-240V,  
VGS=0V  
Zero gate voltage drain current  
On-State Drain Current  
IDSS  
VDS=-190V,  
VGS=0V,  
TJ=125  
°C  
-100  
VDS=-10V,  
VGS=-10V  
ID(ON)  
RDS(ON)  
-0.75 -1.0  
7.1  
9
Ω
VGS=-10V, ID=-200mA  
VGS=-3.5V, ID=-100mA  
Drain-source on-resistance  
8.8  
11  
Ω
Forward Trans-conductance (1) (2)  
Input capacitance(2)  
gfs  
Ciss  
Coss  
Crss  
td(on)  
tr  
125  
100  
18  
5
mS VDS=-10V, ID=-200mA  
pF  
200  
25  
15  
15  
15  
40  
30  
VDS=-25V, VGS=0V, f=1MHz  
Output capacitance(2)  
pF  
pF  
nS  
nS  
nS  
nS  
Reverse transfer capacitance(2)  
Turn-on delay time(2)(3)  
Turn-on rise time(2)(3)  
8
8
VDD=-50V,ID=-250mA,  
VGEN=-10V  
Turn-off delay time(2)(3)  
Turn-off fall time(2)(3)  
td(off)  
tf  
26  
20  
Note:(1) Measured under pulsed conditions. Width=300μs. Duty cycle ≤2%.  
(2) Sample test.  
(3) Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator  
Spice parameter data is available upon request for this device  
1 / 4  
©GUANGDONG HOTTECH INDUSTRIAL CO.,LTD  
E-mail:hkt@heketai.com  

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