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STD4NC50 PDF预览

STD4NC50

更新时间: 2024-11-01 22:16:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 88K
描述
N - CHANNEL 500V - 1.3 ohm - 3.7 A TO-251 PowerMESH MOSFET

STD4NC50 技术参数

生命周期:Obsolete零件包装代码:TO-252
包装说明:SMALL OUTLINE, R-PSSO-G2针数:3
Reach Compliance Code:compliant风险等级:5.67
Is Samacsys:N雪崩能效等级(Eas):220 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:500 V
最大漏极电流 (Abs) (ID):3.7 A最大漏极电流 (ID):3.7 A
最大漏源导通电阻:1.5 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W最大脉冲漏极电流 (IDM):14.8 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子形式:GULL WING
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD4NC50 数据手册

 浏览型号STD4NC50的Datasheet PDF文件第2页浏览型号STD4NC50的Datasheet PDF文件第3页浏览型号STD4NC50的Datasheet PDF文件第4页浏览型号STD4NC50的Datasheet PDF文件第5页浏览型号STD4NC50的Datasheet PDF文件第6页浏览型号STD4NC50的Datasheet PDF文件第7页 
STD4NC50  
N - CHANNEL 500V - 1.3 - 3.7 A TO-251  
PowerMESH MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STD4NC50  
500 V  
< 1.5 Ω  
3.7 A  
TYPICAL RDS(on) = 1.3 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
NEW HIGH VOLTAGE BENCHMARK  
GATE CHARGE MINIMIZED  
3
2
1
DESCRIPTION  
The PowerMESH II is the evolution of the first  
generation of MESH OVERLAY . The layout  
refinements introduced greatly improve the  
Ron*area figure of merit while keeping the device  
at the leading edge for what concerns switching  
speed, gate charge and ruggedness.  
IPAK  
TO-251  
(Suffix ”-1”)  
APPLICATIONS  
INTERNAL SCHEMATIC DIAGRAM  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES(SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVER  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
500  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
500  
± 30  
3.7  
V
o
Drain Current (continuous) at Tc = 25 C  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
A
ID  
2.3  
A
IDM( )  
14.8  
50  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
W
Derating Factor  
0.4  
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
3
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
( ) ISD 3.7 A, di/dt 100 A/µs, VDD V(BR)DSS, Tj TJMAX  
1
1/8  
September 1999  

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