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STD4NB25-1 PDF预览

STD4NB25-1

更新时间: 2024-11-02 15:53:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 局域网开关脉冲晶体管
页数 文件大小 规格书
6页 65K
描述
4A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3

STD4NB25-1 技术参数

生命周期:Obsolete零件包装代码:TO-251
包装说明:IPAK-3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.68其他特性:AVALANCHE RATED
雪崩能效等级(Eas):75 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):4 A最大漏极电流 (ID):4 A
最大漏源导通电阻:1.1 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251JESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):40 W最大脉冲漏极电流 (IDM):16 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD4NB25-1 数据手册

 浏览型号STD4NB25-1的Datasheet PDF文件第2页浏览型号STD4NB25-1的Datasheet PDF文件第3页浏览型号STD4NB25-1的Datasheet PDF文件第4页浏览型号STD4NB25-1的Datasheet PDF文件第5页浏览型号STD4NB25-1的Datasheet PDF文件第6页 
STD4NB25  
®
N - CHANNEL 250V - 0.95- 4A - DPAK/IPAK  
PowerMESH MOSFET  
PRELIMINARY DATA  
TYPE  
VDSS  
RDS(on)  
ID  
STD4NB25  
250 V  
< 1.1 Ω  
4 A  
ν
ν
ν
ν
ν
ν
TYPICAL RDS(on) = 0.95 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
FOR TROUGH-HOLE VERSION CONTACT  
SALES OFFICE  
3
3
1
2
1
IPAK  
TO-251  
(Suffix "-1")  
DPAK  
TO-252  
(Suffix "T4")  
DESCRIPTION  
Using the latest high voltage MESH OVERLAY  
process, STMicroelectronics has designed an  
advanced family of power MOSFETs with  
outstanding performances. The new patent  
pending strip layout coupled with the Company’s  
proprietary edge termination structure, gives the  
lowest RDS(on) per area, exceptional avalanche  
and dv/dt capabilities and unrivalled gate charge  
and switching characteristics.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
ν
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
ν
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
250  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
V
V
V
A
A
A
W
250  
± 30  
4
o
Drain Current (continuous) at Tc = 25 C  
o
ID  
Drain Current (continuous) at Tc = 100 C  
2.5  
I
DM()  
Drain Current (pulsed)  
16  
o
Ptot  
Total Dissipation at Tc = 25 C  
40  
Derating Factor  
0.32  
5.5  
W/oC  
V/ns  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
Tstg  
Storage Temperature  
-65 to 150  
Tj  
Max. Operating Junction Temperature  
150  
oC  
() Pulse width limited by safe operating area  
(1) ISD ≤4 Α, di/dt â 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
1/6  
February 2000  

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