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STD4NB40-1 PDF预览

STD4NB40-1

更新时间: 2024-09-27 22:16:27
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
10页 451K
描述
N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK PowerMESH⑩ MOSFET

STD4NB40-1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-251AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
风险等级:5.74雪崩能效等级(Eas):230 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:400 V
最大漏极电流 (Abs) (ID):3.7 A最大漏极电流 (ID):4 A
最大漏源导通电阻:1.8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251AAJESD-30 代码:R-PSIP-T3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):50 W最大脉冲漏极电流 (IDM):16 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD4NB40-1 数据手册

 浏览型号STD4NB40-1的Datasheet PDF文件第2页浏览型号STD4NB40-1的Datasheet PDF文件第3页浏览型号STD4NB40-1的Datasheet PDF文件第4页浏览型号STD4NB40-1的Datasheet PDF文件第5页浏览型号STD4NB40-1的Datasheet PDF文件第6页浏览型号STD4NB40-1的Datasheet PDF文件第7页 
STD4NB40  
STD4NB40-1  
N-CHANNEL 400V - 1.47- 4A DPAK/IPAK  
PowerMESH™ MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STD4NB40  
400 V  
< 1.8 Ω  
4 A  
TYPICAL R (on) = 1.47 Ω  
DS  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
GATE CHARGE MINIMIZED  
ADD SUFFIX “T4” FOR ORDERING IN TAPE &  
REEL  
3
3
2
1
1
DPAK  
TO-252  
IPAK  
TO-251  
DESCRIPTION  
Using the latest high voltage MESH OVERLAY™  
process, STMicroelectronics has designed an ad-  
vanced family of power MOSFETs with outstanding  
performances. The new patent pending strip layout  
coupled with the Company’s proprieraty edge termi-  
INTERNAL SCHEMATIC DIAGRAM  
nation structure, gives the lowest R  
per area,  
DS(on)  
exceptional avalanche and dv/dt capabilities and  
unrivalled gate charge and switching characteris-  
tics.  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITH MODE POWER SUPPLIES (SMPS)  
DC-DC CONVERTERS FOR TELECOM,  
INDUSTRIAL, AND LIGHTING EQUIPMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
400  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R = 20 k)  
400  
V
DGR  
GS  
V
Gate- source Voltage  
± 30  
4
V
GS  
I
Drain Current (continuos) at T = 25°C  
A
D
C
I
Drain Current (continuos) at T = 100°C  
2.52  
16  
A
D
C
I
( )  
Drain Current (pulsed)  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
60  
W
C
Derating Factor  
0.47  
4
W/°C  
V/ns  
°C  
°C  
dv/dt (1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
T
stg  
–65 to 150  
150  
T
Max. Operating Junction Temperature  
j
(1) I 4A, di/dt200 A/µs, V V  
, TjT  
(BR)DSS jMAX  
(•)Pulse width limited by safe operating area  
SD  
DD  
June 2001  
1/10  

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