5秒后页面跳转
STD4NA40-1 PDF预览

STD4NA40-1

更新时间: 2024-11-01 23:34:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 172K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-251

STD4NA40-1 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:TO-251AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:compliant
风险等级:5.74Is Samacsys:N
雪崩能效等级(Eas):60 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:400 V
最大漏极电流 (Abs) (ID):3.3 A最大漏极电流 (ID):3.3 A
最大漏源导通电阻:2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e0元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:IN-LINE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):50 W
最大脉冲漏极电流 (IDM):13.2 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Tin/Lead (Sn/Pb)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD4NA40-1 数据手册

 浏览型号STD4NA40-1的Datasheet PDF文件第2页浏览型号STD4NA40-1的Datasheet PDF文件第3页浏览型号STD4NA40-1的Datasheet PDF文件第4页浏览型号STD4NA40-1的Datasheet PDF文件第5页浏览型号STD4NA40-1的Datasheet PDF文件第6页浏览型号STD4NA40-1的Datasheet PDF文件第7页 
STD4NA40  
N - CHANNEL ENHANCEMENT MODE  
FAST POWER MOS TRANSISTOR  
TYPE  
VDSS  
RDS(on)  
< 2 Ω  
ID  
STD4NA40  
400 V  
3.3 A  
TYPICAL RDS(on) = 1.7 Ω  
AVALANCHE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
APPLICATION ORIENTED  
3
3
2
CHARACTERIZATION  
1
1
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGE IN TUBE (SUFFIX ”-1”)  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX ”T4”)  
IPAK  
TO-251  
(Suffix ”-1”)  
DPAK  
TO-252  
(Suffix ”T4”)  
APPLICATIONS  
HIGH SPEED SWITCHING  
UNINTERRUPTIBLE POWER SUPPLY (UPS)  
MOTOR CONTROL, AUDIO AMPLIFIERS  
INDUSTRIAL ACTUATORS  
DC-DC & DC-AC CONVERTERS FOR  
TELECOM, INDUSTRIAL AND CONSUMER  
ENVIRONMENT  
INTERNAL SCHEMATIC DIAGRAM  
PARTICULARLY SUITABLE FOR  
ELECTRONIC FLUORESCENT LAMP  
BALLASTS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
400  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
V
V
VDG R  
VGS  
400  
± 30  
3.3  
V
ID  
A
ID  
2.1  
A
IDM()  
Ptot  
13.2  
50  
A
Total Dissipation at Tc = 25 oC  
W
Derating Factor  
0.4  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/10  
November 1996  

与STD4NA40-1相关器件

型号 品牌 获取价格 描述 数据表
STD4NA40T4 STMICROELECTRONICS

获取价格

3.3A, 400V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3
STD4NA40-T4 STMICROELECTRONICS

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-252
STD4NB25 STMICROELECTRONICS

获取价格

N - CHANNEL 250V - 0.95ohm - 4A - DPAK/IPAK PowerMESHO MOSFET
STD4NB25-1 STMICROELECTRONICS

获取价格

4A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, IPAK-3
STD4NB25T4 STMICROELECTRONICS

获取价格

4A, 250V, 1.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
STD4NB40 STMICROELECTRONICS

获取价格

N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK Power
STD4NB40-1 STMICROELECTRONICS

获取价格

N-CHANNEL 400V - 1.47ohm - 4A DPAK/IPAK Power
STD4NB40T4 STMICROELECTRONICS

获取价格

4A, 400V, 1.8ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3
STD4NC50 STMICROELECTRONICS

获取价格

N - CHANNEL 500V - 1.3 ohm - 3.7 A TO-251 PowerMESH MOSFET
STD4NC50_07 STMICROELECTRONICS

获取价格

N-CHANNEL 500V - 1.3W - 3.7A DPAK/IPAK PowerM