Datasheet > STD4N25

STD4N25

更新时间： 2024-11-23 22:29:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体晶体管
页数	文件大小	规格书
10页	144K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

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STD4N25 数据手册

STD4N25

N - CHANNEL ENHANCEMENT MODE

POWER MOS TRANSISTORS

TYPE

V_DSS

R_DS(on)

< 1.1 Ω

I_D

STD4N25

250 V

4 A

■

TYPICAL R_DS(on)= 0.7 Ω

AVALANCHE RUGGED TECHNOLOGY

100% AVALANCHE TESTED

REPETITIVE AVALANCHE DATA AT 100^oC

APPLICATION ORIENTED

CHARACTERIZATION

■

THROUGH-HOLE IPAK (TO-251) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

SURFACE-MOUNTING DPAK (TO-252)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

IPAK

TO-251

(Suffix ”-1”)

DPAK

TO-252

(Suffix ”T4”)

APPLICATIONS

■

HIGH SPEED SWITCHING

UNINTERRUPTIBLE POWER SUPPLY (UPS)

MOTOR CONTROL, AUDIO AMPLIFIERS

INDUSTRIAL ACTUATORS

DC-DC & DC-AC CONVERTERS FOR

TELECOM, INDUSTRIAL AND CONSUMER

ENVIRONMENT

INTERNAL SCHEMATIC DIAGRAM

■

PARTICULARLY SUITABLE FOR

ELECTRONIC FLUORESCENT LAMP

BALLASTS

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

250

Unit

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

Drain Current (continuous) at T_c= 100 ^oC

Drain Current (pulsed)

V_{DG R}

V_GS

250

± 20

I_D

2.5

I_DM(•)

P_tot

Total Dissipation at T_c= 25 ^oC

Derating Factor

0.4

W/^oC

^oC

T_stg

T_j

Storage Temperature

-65 to 150

150

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

1/10

December 1996

12 3 4 5 6 7...10

中文翻译

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与STD4N25相关器件

型号	品牌	获取价格	描述	数据表
STD4N25-1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 4A I(D) \| TO-251
STD4N25T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 250V V(BR)DSS \| 4A I(D) \| TO-252
STD4N52K3	STMICROELECTRONICS	获取价格	N-channel 525 V, 2.5 A, 2.1 Î© typ., SuperMES
STD4N62K3	STMICROELECTRONICS	获取价格	N-channel 620 V, 1.7 Î©, 3.8 A SuperMESH3 Pow
STD4N62K3TRL	STMICROELECTRONICS	获取价格	3.8A, 620V, 1.95ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3
STD4N80K5	STMICROELECTRONICS	获取价格	N沟道800 V、2.1 Ohm典型值、3 A MDmesh K5功率MOSFET，DPA
STD4N90K5	STMICROELECTRONICS	获取价格	N沟道900 V、1.90 Ohm典型值、3 A MDmesh K5功率MOSFET，DP
STD4NA40	STMICROELECTRONICS	获取价格	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STD4NA40-1	STMICROELECTRONICS	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 400V V(BR)DSS \| 3.3A I(D) \| TO-251
STD4NA40T4	STMICROELECTRONICS	获取价格	3.3A, 400V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3