5秒后页面跳转
STD4N25 PDF预览

STD4N25

更新时间: 2024-11-01 22:29:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管
页数 文件大小 规格书
10页 144K
描述
N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

STD4N25 数据手册

 浏览型号STD4N25的Datasheet PDF文件第2页浏览型号STD4N25的Datasheet PDF文件第3页浏览型号STD4N25的Datasheet PDF文件第4页浏览型号STD4N25的Datasheet PDF文件第5页浏览型号STD4N25的Datasheet PDF文件第6页浏览型号STD4N25的Datasheet PDF文件第7页 
STD4N25  
N - CHANNEL ENHANCEMENT MODE  
POWER MOS TRANSISTORS  
TYPE  
VDSS  
RDS(on)  
< 1.1 Ω  
ID  
STD4N25  
250 V  
4 A  
TYPICAL RDS(on) = 0.7 Ω  
AVALANCHE RUGGED TECHNOLOGY  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
APPLICATION ORIENTED  
3
3
2
CHARACTERIZATION  
1
1
THROUGH-HOLE IPAK (TO-251) POWER  
PACKAGE IN TUBE (SUFFIX ”-1”)  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX ”T4”)  
IPAK  
TO-251  
(Suffix ”-1”)  
DPAK  
TO-252  
(Suffix ”T4”)  
APPLICATIONS  
HIGH SPEED SWITCHING  
UNINTERRUPTIBLE POWER SUPPLY (UPS)  
MOTOR CONTROL, AUDIO AMPLIFIERS  
INDUSTRIAL ACTUATORS  
DC-DC & DC-AC CONVERTERS FOR  
TELECOM, INDUSTRIAL AND CONSUMER  
ENVIRONMENT  
INTERNAL SCHEMATIC DIAGRAM  
PARTICULARLY SUITABLE FOR  
ELECTRONIC FLUORESCENT LAMP  
BALLASTS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
250  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
V
V
VDG R  
VGS  
250  
± 20  
4
V
ID  
A
ID  
2.5  
A
IDM()  
Ptot  
16  
A
Total Dissipation at Tc = 25 oC  
50  
W
Derating Factor  
0.4  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/10  
December 1996  

与STD4N25相关器件

型号 品牌 获取价格 描述 数据表
STD4N25-1 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4A I(D) | TO-251
STD4N25T4 ETC

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 4A I(D) | TO-252
STD4N52K3 STMICROELECTRONICS

获取价格

N-channel 525 V, 2.5 A, 2.1 Ω typ., SuperMES
STD4N62K3 STMICROELECTRONICS

获取价格

N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Pow
STD4N62K3TRL STMICROELECTRONICS

获取价格

3.8A, 620V, 1.95ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, ROHS COMPLIANT, DPAK-3
STD4N80K5 STMICROELECTRONICS

获取价格

N沟道800 V、2.1 Ohm典型值、3 A MDmesh K5功率MOSFET,DPA
STD4N90K5 STMICROELECTRONICS

获取价格

N沟道900 V、1.90 Ohm典型值、3 A MDmesh K5功率MOSFET,DP
STD4NA40 STMICROELECTRONICS

获取价格

N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
STD4NA40-1 STMICROELECTRONICS

获取价格

TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 3.3A I(D) | TO-251
STD4NA40T4 STMICROELECTRONICS

获取价格

3.3A, 400V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3