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STD4N62K3 PDF预览

STD4N62K3

更新时间: 2024-11-02 12:29:03
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
18页 1049K
描述
N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET

STD4N62K3 技术参数

是否Rohs认证:符合生命周期:Active
零件包装代码:TO-252包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:5.21Is Samacsys:N
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:620 V
最大漏极电流 (Abs) (ID):3.8 A最大漏极电流 (ID):3.8 A
最大漏源导通电阻:1.95 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):70 W
最大脉冲漏极电流 (IDM):15.2 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD4N62K3 数据手册

 浏览型号STD4N62K3的Datasheet PDF文件第2页浏览型号STD4N62K3的Datasheet PDF文件第3页浏览型号STD4N62K3的Datasheet PDF文件第4页浏览型号STD4N62K3的Datasheet PDF文件第5页浏览型号STD4N62K3的Datasheet PDF文件第6页浏览型号STD4N62K3的Datasheet PDF文件第7页 
STB4N62K3,  
STD4N62K3  
N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3™ Power MOSFET  
in D2PAK and DPAK packages  
Datasheet — production data  
Features  
Order codes VDSS RDS(on) max  
ID  
Pw  
TAB  
STB4N62K3  
STD4N62K3  
620 V  
< 2 Ω  
3.8 A 70 W  
TAB  
3
3
100% avalanche tested  
1
1
Extremely high dv/dt capability  
Gate charge minimized  
DPAK  
PAK  
Very low intrinsic capacitance  
Improved diode reverse recovery  
characteristics  
Zener-protected  
Figure 1.  
Internal schematic diagram  
Application  
D(2,TAB)  
Switching applications  
Description  
G(1)  
These devices are made using the  
SuperMESH3™ Power MOSFET technology that  
is obtained via improvements applied to  
STMicroelectronics’ SuperMESH™ technology  
combined with a new optimized vertical structure.  
The resulting product has an extremely low on  
resistance, superior dynamic performance and  
high avalanche capability, making it especially  
suitable for the most demanding applications.  
S(3)  
AM01476v1  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
Tape and reel  
STB4N62K3  
STD4N62K3  
PAK  
DPAK  
4N62K3  
April 2012  
Doc ID 18337 Rev 2  
1/18  
This is information on a product in full production.  
www.st.com  
18  

STD4N62K3 替代型号

型号 品牌 替代类型 描述 数据表
STB4N62K3 STMICROELECTRONICS

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N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Pow

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