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STB4N62K3 PDF预览

STB4N62K3

更新时间: 2024-09-13 12:03:11
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
18页 1049K
描述
N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Power MOSFET

STB4N62K3 数据手册

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STB4N62K3,  
STD4N62K3  
N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3™ Power MOSFET  
in D2PAK and DPAK packages  
Datasheet — production data  
Features  
Order codes VDSS RDS(on) max  
ID  
Pw  
TAB  
STB4N62K3  
STD4N62K3  
620 V  
< 2 Ω  
3.8 A 70 W  
TAB  
3
3
100% avalanche tested  
1
1
Extremely high dv/dt capability  
Gate charge minimized  
DPAK  
PAK  
Very low intrinsic capacitance  
Improved diode reverse recovery  
characteristics  
Zener-protected  
Figure 1.  
Internal schematic diagram  
Application  
D(2,TAB)  
Switching applications  
Description  
G(1)  
These devices are made using the  
SuperMESH3™ Power MOSFET technology that  
is obtained via improvements applied to  
STMicroelectronics’ SuperMESH™ technology  
combined with a new optimized vertical structure.  
The resulting product has an extremely low on  
resistance, superior dynamic performance and  
high avalanche capability, making it especially  
suitable for the most demanding applications.  
S(3)  
AM01476v1  
Table 1.  
Device summary  
Order codes  
Marking  
Package  
Packaging  
Tape and reel  
STB4N62K3  
STD4N62K3  
PAK  
DPAK  
4N62K3  
April 2012  
Doc ID 18337 Rev 2  
1/18  
This is information on a product in full production.  
www.st.com  
18  

STB4N62K3 替代型号

型号 品牌 替代类型 描述 数据表
STD4N62K3 STMICROELECTRONICS

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N-channel 620 V, 1.7 Ω, 3.8 A SuperMESH3 Pow

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