Datasheet > STB4NB50

STB4NB50

更新时间： 2024-09-12 22:16:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
6页	66K
描述
N - CHANNEL 500V - 2.5ohm - 3.8A - D2PAK/I2PAK PowerMESHO MOSFET

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STB4NB50 数据手册

STB4NB50

N - CHANNEL 500V - 2.5Ω - 3.8A - D2PAK/I2PAK

PowerMESH MOSFET

PRELIMINARY DATA

TYPE

V_DSS

R_DS(on)

I_D

STB4NB50

500 V

< 2.8 Ω

3.8 A

■

TYPICAL R_DS(on)= 2.5 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

DESCRIPTION

I²PAK

TO-262

(suffix "-1")

D²PAK

TO-263

Using the latest high voltage MESH OVERLAY

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

(Suffix "T4")

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

V_DGR

V_GS

I_D

Parameter

Value

500

Unit

Drain-source Voltage (V_GS= 0)

500

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

± 30

3.8

Drain Current (continuous) at T_c= 25 C

I_D

Drain Current (continuous) at T_c= 100 C

2.4

_DM(• )

Drain Current (pulsed)

Total Dissipation at T_c= 25 ^oC

Derating Factor

15.2

P_tot

0.64

4.5

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

T_stg

T_j

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

(•) Pulse width limited by safe operating area

(1) I_SD≤ 4 A, di/dt ≤ 200 A/µs, V_DD≤ V_(BR)DSS, Tj ≤ T_JMAX

1/8

October 1998

12 3 4 5 6

中文翻译

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与STB4NB50相关器件

型号	品牌	获取价格	描述	数据表
STB4NB50-1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 3.8A I(D) \| TO-262AA
STB4NB50T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 3.8A I(D) \| TO-263AB
STB4NB80	STMICROELECTRONICS	获取价格	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET
STB4NB80-1	STMICROELECTRONICS	获取价格	暂无描述
STB4NB80FP	STMICROELECTRONICS	获取价格	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET
STB4NB80FPT4	STMICROELECTRONICS	获取价格	4A, 800V, 3.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
STB4NB80T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 4A I(D) \| TO-263AB
STB4NC50	STMICROELECTRONICS	获取价格	N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh⑩
STB4NC60	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMes
STB4NC60-1	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220F