Datasheet > STB50NE10_06

STB50NE10_06

更新时间： 2024-11-01 04:02:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	413K
描述
N-channel 100V - 0.021ヘ - 50A - D2PAK STripFET⑩ Power MOSFET

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STB50NE10_06 数据手册

STB50NE10

N-channel 100V - 0.021Ω - 50A - D²PAK

STripFET™ Power MOSFET

General features

Type

V_DSS

R_DS(on)

I_D

STB50NE10

100V

<0.027Ω

50A

■ Exceptional dv/dt capability

■ 100% avalanche tested

■ Low gate charge at 100 °C

■ Application oriented characterization

D²PAK

Description

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™"

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a

Internal schematic diagram

remarkable manufacturing reproducibility.

Applications

■ Switching application

Order codes

Part number

Marking

Package

Packaging

STB50NE10T4

B50NE10

D²PAK

Tape & reel

June 2006

Rev 5

1/13

www.st.com

12 3 4 5 6 7...13

中文翻译

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