STB55NF06L-1

更新时间： 2024-11-29 22:06:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
12页	455K
描述
N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET

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数据手册

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STB55NF06L-1 数据手册

STP55NF06L - STP55NF06LFP

STB55NF06L - STB55NF06L-1

N-CHANNEL 60V - 0.014Ω - 55A TO-220/FP/D²PAK/I²PAK

STripFET™II POWER MOSFET

TYPE

DSS

DS(on)

STP55NF06L

STP55NF06LFP

STB55NF06L

STB55NF06L-1

60 V

<0.018 Ω

55 A

■

TYPICAL R (on) = 0.014Ω

TO-220

TO-220FP

EXCEPTIONAL dv/dt CAPABILITY

APPLICATION ORIENTED

CHARACTERIZATION

DESCRIPTION

D PAK

This Power Mosfet is the latest development of

STMicroelectronics unique “Single Feature

Size™” strip-based process. The resulting tran-

sistor shows extremely high packing density for

low on-resistance, rugged avalance characteris-

tics and less critical alignment steps therefore a re-

markable manufacturing reproducibility.

I PAK

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC & DC-AC CONVERTERS

AUTOMOTIVE ENVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP55NF06L

STB55NF06L/-1

STP55NF06LFP

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

± 16

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

( )

Drain Current (pulsed)

220

120

TOT

Total Dissipation at T = 25°C

Derating Factor

0.63

0.2

W/°C

V/ns

dv/dt (2)

(1)

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Insulation Withstand Voltage (DC)

Storage Temperature

300

ISO

2500

stg

– 55 to 175

°C

Max. Operating Junction Temperature

(1) Starting T =25°C, I =27.5A, V =30V

(●) Pulse width limited by safe operating area

August 2002

1/12

(2) I ≤ 55 A, di/dt ≤ 200A/µs, V ≤ V

, T ≤ T

j JMAX.

(BR)DSS

12 3 4 5 6 7...12

中文翻译

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