Datasheet > STB5NB60

STB5NB60

更新时间： 2024-09-28 22:27:11

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
9页	95K
描述
N - CHANNEL 600V - 1.8ohm - 5A - I2PAK/D2PAK PowerMESH MOSFET

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STB5NB60 数据手册

STB5NB60

N - CHANNEL 600V - 1.8Ω - 5A - I PAK/D PAK

PowerMESH MOSFET

TYPE

V_DSS

R_DS(on)

I_D

STB5NB60

600 V

< 2.0 Ω

5 A

■

TYPICAL R_DS(on)= 1.8 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

DESCRIPTION

I²PAK

TO-262

(suffix ”-1”)

D²PAK

TO-263

Using the latest high voltage MESH OVERLAY

process, STMicroelectronics has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

(Suffix ”T4”)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES(SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENTAND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

V_DS

Parameter

Value

600

Unit

Drain-source Voltage (V_GS= 0)

V_DGR

V_GS

600

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

Drain Current (continuous) at T_c= 25 ^oC

± 30

I_D

Drain Current (continuous) at T_c= 100 C

3.1

I_DM(• )

P_tot

Drain Current (pulsed)

Total Dissipation at T_c= 25 C

100

Derating Factor

0.8

W/^oC

V/ns

^oC

dv/dt(1) Peak Diode Recovery voltage slope

4.5

T_stg

T_j

Storage Temperature

-65 to 150

Max. Operating Junction Temperature

150

(•) Pulse width limited by safe operating area

( 1) I_SD≤ 5A, di/dt ≤ 200 A/µs, V_DD≤ V_(BR)DSS, Tj ≤ T_JMAX

1/9

January 2000

12 3 4 5 6 7...9

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与STB5NB60相关器件

型号	品牌	获取价格	描述	数据表
STB5NB60-1	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 5A I(D) \| TO-251AA
STB5NB60T4	STMICROELECTRONICS	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 5A I(D) \| TO-263AB
STB5NB80	STMICROELECTRONICS	获取价格	N - CHANNEL 800V - 1.8ohm - 5A -D2PAK PowerMESH] MOSFET
STB5NB80T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 5A I(D) \| TO-263AB
STB5NC50	STMICROELECTRONICS	获取价格	N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PA
STB5NC50-1	STMICROELECTRONICS	获取价格	N-CHANNEL 500V - 1.3ohm - 5.5A TO-220/FP/D2PA
STB5NC50T4	STMICROELECTRONICS	获取价格	N-CHANNEL 500V - 1.3 OHM - 5.5A - TO-220/TO-220FP/D2PAK/I2PAK POWERMESH II MOSFET
STB5NC70Z	STMICROELECTRONICS	获取价格	N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPA
STB5NC70Z-1	STMICROELECTRONICS	获取价格	N-CHANNEL 700V - 1.8ohm - 4.6A TO-220/FP/DPA
STB5NC70ZT4	STMICROELECTRONICS	获取价格	N-CHANNEL 700V 1.8 OHM 4.6A TO-220/TO-220FP/D2PAK/I2PAK ZENER-PROTECTED POWERMESH III MOSF