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STB5NB60T4 PDF预览

STB5NB60T4

更新时间: 2024-01-05 21:33:05
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲局域网
页数 文件大小 规格书
9页 95K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 5A I(D) | TO-263AB

STB5NB60T4 技术参数

是否Rohs认证:符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:TO-263, D2PAK-3
针数:4Reach Compliance Code:unknown
风险等级:5.66Is Samacsys:N
其他特性:AVALANCHE RATED雪崩能效等级(Eas):300 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:600 V
最大漏极电流 (Abs) (ID):5 A最大漏极电流 (ID):5 A
最大漏源导通电阻:2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
JESD-609代码:e0元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W最大脉冲漏极电流 (IDM):20 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:TIN LEAD
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB5NB60T4 数据手册

 浏览型号STB5NB60T4的Datasheet PDF文件第2页浏览型号STB5NB60T4的Datasheet PDF文件第3页浏览型号STB5NB60T4的Datasheet PDF文件第4页浏览型号STB5NB60T4的Datasheet PDF文件第5页浏览型号STB5NB60T4的Datasheet PDF文件第6页浏览型号STB5NB60T4的Datasheet PDF文件第7页 
STB5NB60  
2
2
N - CHANNEL 600V - 1.8- 5A - I PAK/D PAK  
PowerMESH MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STB5NB60  
600 V  
< 2.0 Ω  
5 A  
TYPICAL RDS(on) = 1.8 Ω  
EXTREMELY HIGH dv/dt CAPABILITY  
100% AVALANCHE TESTED  
VERY LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
3
2
1
1
DESCRIPTION  
I2PAK  
TO-262  
(suffix ”-1”)  
D2PAK  
TO-263  
Using the latest high voltage MESH OVERLAY  
process, STMicroelectronics has designed an  
advanced family of power MOSFETs with  
outstanding performances. The new patent  
pending strip layout coupled with the Company’s  
proprietary edge termination structure, gives the  
lowest RDS(on) per area, exceptional avalanche  
and dv/dt capabilities and unrivalled gate charge  
and switching characteristics.  
(Suffix ”T4”)  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES(SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENTAND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
600  
Unit  
Drain-source Voltage (VGS = 0)  
V
V
VDGR  
VGS  
600  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
± 30  
5
V
ID  
A
o
ID  
Drain Current (continuous) at Tc = 100 C  
3.1  
A
IDM()  
Ptot  
Drain Current (pulsed)  
20  
A
o
Total Dissipation at Tc = 25 C  
100  
W
Derating Factor  
0.8  
W/oC  
V/ns  
oC  
oC  
dv/dt(1) Peak Diode Recovery voltage slope  
4.5  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
Max. Operating Junction Temperature  
150  
() Pulse width limited by safe operating area  
( 1) ISD 5A, di/dt 200 A/µs, VDD V(BR)DSS, Tj TJMAX  
1/9  
January 2000  

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