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STB5N80K5 PDF预览

STB5N80K5

更新时间: 2024-12-01 14:57:47
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
15页 898K
描述
N沟道800 V、1.50 Ohm典型值、4 A MDmesh K5功率MOSFET,D2PAK封装

STB5N80K5 数据手册

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STB5N80K5  
N-channel 800 V, 1.50 Ω typ., 4 A MDmesh™ K5  
Power MOSFET in a D²PAK package  
Datasheet - production data  
Features  
Order code  
VDS  
RDS(on) max.  
ID  
TAB  
STB5N80K5  
800 V  
1.75 Ω  
4 A  
2
1
Industry’s lowest RDS(on) x area  
Industry’s best FoM (figure of merit)  
Ultra-low gate charge  
100% avalanche tested  
Zener-protected  
3
D²  
PAK  
Applications  
Switching applications  
Figure 1: Internal schematic diagram  
Description  
This very high voltage N-channel Power  
MOSFET is designed using MDmesh™ K5  
technology based on an innovative proprietary  
vertical structure. The result is a dramatic  
reduction in on-resistance and ultra-low gate  
charge for applications requiring superior power  
density and high efficiency.  
Table 1: Device summary  
Marking Package  
5N80K5 D²PAK  
Order code  
Packing  
STB5N80K5  
Tape and reel  
May 2016  
DocID028512 Rev 2  
1/15  
www.st.com  
This is information on a product in full production.  

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