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STB5NA50-1 PDF预览

STB5NA50-1

更新时间: 2024-11-29 23:34:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲
页数 文件大小 规格书
10页 128K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-262VAR

STB5NA50-1 数据手册

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STB5NA50  
N - CHANNEL ENHANCEMENT MODE  
FAST POWER MOS TRANSISTOR  
TYPE  
VDSS  
RDS(on )  
< 1.6 Ω  
ID  
STB5NA50  
500 V  
5 A  
n
n
n
n
n
n
n
n
TYPICAL RDS(on) = 1.2 Ω  
± 30V GATE TO SOURCE VOLTAGE RATING  
100% AVALANCHE TESTED  
REPETITIVE AVALANCHE DATA AT 100oC  
LOW INTRINSIC CAPACITANCES  
GATE CHARGE MINIMIZED  
3
3
2
REDUCED THRESHOLD VOLTAGE SPREAD  
THROUGH-HOLE I2PAK (TO-262) POWER  
PACKAGE IN TUBE (SUFFIX ”-1”)  
SURFACE-MOUNTING D2PACK (TO-263)  
POWER PACKAGE IN TUBE (NO SUFFIX)  
OR IN TAPE & REEL (SUFFIX ”T4”)  
1
1
I2PAK  
TO-262  
D2PAK  
TO-263  
n
APPLICATIONS  
n
n
n
HIGH CURRENT, HIGH SPEED SWITCHING  
SWITCH MODE POWER SUPPLIES (SMPS)  
DC-AC CONVERTERS FOR WELDING  
EQUIPMENT AND UNINTERRUPTIBLE  
POWER SUPPLIES AND MOTOR DRIVE  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
500  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
V
V
VDGR  
VGS  
ID  
500  
± 30  
5
V
A
ID  
3.3  
A
I
DM()  
20  
A
Ptot  
Total Dissipation at Tc = 25 oC  
100  
W
Derating Factor  
0.8  
W/oC  
oC  
oC  
Tstg  
Tj  
Storage Temperature  
-65 to 150  
150  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
1/10  
October 1995  

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