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STB55NF06T4 PDF预览

STB55NF06T4

更新时间: 2024-01-05 07:00:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲PC
页数 文件大小 规格书
18页 543K
描述
N-channel 60V - 0.015ヘ - 50A - D2PAK/I2PAK/TO-220/TO-220FP STripFET⑩ II Power MOSFET

STB55NF06T4 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:12 weeks
风险等级:1.66Samacsys Confidence:3
Samacsys Status:ReleasedSamacsys PartID:180091
Samacsys Pin Count:3Samacsys Part Category:Integrated Circuit
Samacsys Package Category:TO-XXX (Inc. DPAK)Samacsys Footprint Name:D2PAK_STD_ST
Samacsys Released Date:2015-11-09 14:24:38Is Samacsys:N
雪崩能效等级(Eas):340 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):50 A
最大漏极电流 (ID):50 A最大漏源导通电阻:0.018 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):95 W最大脉冲漏极电流 (IDM):200 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB55NF06T4 数据手册

 浏览型号STB55NF06T4的Datasheet PDF文件第2页浏览型号STB55NF06T4的Datasheet PDF文件第3页浏览型号STB55NF06T4的Datasheet PDF文件第4页浏览型号STB55NF06T4的Datasheet PDF文件第5页浏览型号STB55NF06T4的Datasheet PDF文件第6页浏览型号STB55NF06T4的Datasheet PDF文件第7页 
STB55NF06 - STB55NF06-1  
STP55NF06 - STP55NF06FP  
N-channel 60V - 0.015- 50A - D2PAK/I2PAK/TO-220/TO-220FP  
STripFET™ II Power MOSFET  
General features  
Type  
VDSS  
RDS(on)  
ID  
STB55NF06  
STB55NF06-1  
STP55NF06  
60V  
60V  
60V  
60V  
<0.018  
<0.018Ω  
<0.018Ω  
<0.018Ω  
50A  
50A  
3
3
1
2
1
D2PAK  
50A  
50A (1)  
TO-220  
STP55NF06FP  
1. Refer to soa for the max allowable current value on  
FP-type due to Rth value  
3
2
100% avalanche tested  
1
3
2
1
I2PAK  
Exceptional dv/dt capability  
TO-220FP  
Description  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a  
Internal schematic diagram  
remarkable manufacturing reproducibility.  
Applications  
Switching application  
Order codes  
Part number  
Marking  
Package  
Packaging  
STB55NF06T4  
STB55NF06-1  
STP55NF06FP  
STP55NF06  
B55NF06  
B55NF06  
D2PAK  
I2PAK  
Tape & reel  
Tube  
P55NF06FP  
P55NF06  
TO-220FP  
TO-220  
Tube  
Tube  
June 2006  
Rev 10  
1/18  
www.st.com  
18  

STB55NF06T4 替代型号

型号 品牌 替代类型 描述 数据表
STP60NF06L STMICROELECTRONICS

类似代替

N-CHANNEL 60V - 0.012 OHM - 60A TO-220/TO-220
STP60NF06 STMICROELECTRONICS

类似代替

N-CHANNEL 60V - 0.014ohm - 60A TO-220/TO-220F
STP55NF06 STMICROELECTRONICS

类似代替

N-CHANNEL 60V - 0.015 ohm - 50A TO-220/TO-220

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