Datasheet > STB5N52K3

STB5N52K3

更新时间： 2024-11-30 12:47:07

品牌	Logo	应用领域
其他 - ETC		/
页数	文件大小	规格书
23页	1199K
描述
N-channel 525 V, 1.2 Î©, 4.4 A SuperMESH3â¢ Power MOSFET DÂ²PAK, DPAK, TO-220FP, TO-220, IPAK

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中文翻译

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数据手册

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STB5N52K3 数据手册

STB5N52K3, STD5N52K3, STF5N52K3

STP5N52K3, STU5N52K3

N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3™ Power MOSFET

D²PAK, DPAK, TO-220FP, TO-220, IPAK

Features

Order codes

V_DSSR_DS(on)max

I_D

P_w

STB5N52K3

STD5N52K3

STF5N52K3

STP5N52K3

STU5N52K3

70 W

525 V

< 1.5 Ω

4.4 A 25 W

70 W

TO-220

IPAK

TO-220FP

DPAK

70 W

■ 100% avalanche tested

■ Extremely high dv/dt capability

■ Gate charge minimized

D²PAK

■ Very low intrinsic capacitance

■ Improved diode reverse recovery

characteristics

Figure 1.

Internal schematic diagram

■ Zener-protected

D(2)

Application

Switching applications

G(1)

Description

These devices are made using the

SuperMESH3™ Power MOSFET technology that

is obtained via improvements applied to

STMicroelectronics’ SuperMESH™ technology

combined with a new optimized vertical structure.

The resulting product has an extremely low on

resistance, superior dynamic performance and

high avalanche capability, making it especially

suitable for the most demanding applications.

S(3)

AM01476v1

Table 1.

Device summary

Order codes

Marking

Package

Packaging

STB5N52K3

STD5N52K3

STF5N52K3

STP5N52K3

STU5N52K3

D²PAK

DPAK

Tape and reel

Tube

5N52K3

TO-220FP

TO-220

IPAK

December 2010

Doc ID 16952 Rev 2

1/23

www.st.com

12 3 4 5 6 7...23

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