STB57N65M5

更新时间： 2024-12-01 11:16:15

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		晶体管功率场效应晶体管
页数	文件大小	规格书
22页	1364K
描述
N沟道650 V、0.056 Ohm典型值、42 A MDmesh M5功率MOSFET，D2PAK封装

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中文翻译

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数据手册

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STB57N65M5 数据手册

STB57N65M5, STF57N65M5, STI57N65M5,

STP57N65M5

N-channel 650 V, 0.056 Ω typ., 42 A MDmesh™ V Power MOSFET

in I²PAK, TO-220, TO-220FP and D²PAK packages

Datasheet — production data

Features

TAB

V_DSS

T_Jmax

R_DS(on)

max

Order codes

I_D

STB57N65M5

STF57N65M5

STI57N65M5

STP57N65M5

D²PAK

TO-220FP

710 V

< 0.063 Ω

42 A

TAB

■ Worldwide best R_DS(on)*area amongst the

silicon based devices

■ Higher V_DSSrating, high dv/dt capability

■ Excellent switching performance

I²PAK

TO-220

■ Easy to drive, 100% avalanche tested

Figure 1.

Internal schematic diagram

Applications

$ꢅꢆꢇ 4!"ꢈ

■ Switching applications

Description

These devices are N-channel MDmesh™ V

Power MOSFETs based on an innovative

proprietary vertical process technology, which is

combined with STMicroelectronics’ well-known

PowerMESH™ horizontal layout structure. The

resulting product has extremely low on-

'ꢅꢁꢈ

3ꢅꢉꢈ

resistance, which is unmatched among silicon-

based Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.

!-ꢀꢁꢂꢃꢄVꢁ

Table 1.

Device summary

Order codes

Marking

Packages

Packaging

STB57N65M5

STF57N65M5

STI57N65M5

STP57N65M5

D²PAK

TO-220FP

I²PAK

Tape and reel

Tube

57N65M5

Tube

TO-220

Tube

December 2012

Doc ID 022849 Rev 4

1/22

This is information on a product in full production.

www.st.com

12 3 4 5 6 7...22

中文翻译

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