是否无铅: | 不含铅 | 是否Rohs认证: | 符合 |
生命周期: | Obsolete | 零件包装代码: | QFN |
包装说明: | HVQCCN, LCC32,.2SQ,20 | 针数: | 32 |
Reach Compliance Code: | compliant | HTS代码: | 8542.39.00.01 |
风险等级: | 5.67 | JESD-30 代码: | S-XQCC-N32 |
长度: | 5 mm | 功能数量: | 1 |
端子数量: | 32 | 最高工作温度: | 70 °C |
最低工作温度: | 封装主体材料: | UNSPECIFIED | |
封装代码: | HVQCCN | 封装等效代码: | LCC32,.2SQ,20 |
封装形状: | SQUARE | 封装形式: | CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE |
峰值回流温度(摄氏度): | NOT SPECIFIED | 电源: | 3.3 V |
认证状态: | Not Qualified | 座面最大高度: | 1 mm |
子类别: | Other Telecom ICs | 标称供电电压: | 3.3 V |
表面贴装: | YES | 技术: | BICMOS |
电信集成电路类型: | TELECOM CIRCUIT | 温度等级: | COMMERCIAL |
端子形式: | NO LEAD | 端子节距: | 0.5 mm |
端子位置: | QUAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
宽度: | 5 mm | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STB57N65M5 | STMICROELECTRONICS |
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N沟道650 V、0.056 Ohm典型值、42 A MDmesh M5功率MOSFET, | |
STB5BK50Z-1 | STMICROELECTRONICS |
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N-CHANNEL500V-1.22ohm-4.4ATO-220/FP/DPAK/IPAK | |
STB5N52K3 | ETC |
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N-channel 525 V, 1.2 Ω, 4.4 A SuperMESH3⢠| |
STB5N62K3 | STMICROELECTRONICS |
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N-channel 620 V, 1.28 ohm, 4.2 A SuperMESH3 Power MOSFET | |
STB5N80K5 | STMICROELECTRONICS |
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N沟道800 V、1.50 Ohm典型值、4 A MDmesh K5功率MOSFET,D2 | |
STB5NA50 | STMICROELECTRONICS |
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N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR | |
STB5NA50-1 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-262VAR | |
STB5NA50T4 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 5A I(D) | TO-263AB | |
STB5NA80 | STMICROELECTRONICS |
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N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR | |
STB5NA80-1 | STMICROELECTRONICS |
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4.7A, 800V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA, TO-262, I2PAK-3 |