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STB55NF06LT4 PDF预览

STB55NF06LT4

更新时间: 2024-11-29 23:34:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲PC
页数 文件大小 规格书
12页 195K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 55A I(D) | TO-263AB

STB55NF06LT4 数据手册

 浏览型号STB55NF06LT4的Datasheet PDF文件第2页浏览型号STB55NF06LT4的Datasheet PDF文件第3页浏览型号STB55NF06LT4的Datasheet PDF文件第4页浏览型号STB55NF06LT4的Datasheet PDF文件第5页浏览型号STB55NF06LT4的Datasheet PDF文件第6页浏览型号STB55NF06LT4的Datasheet PDF文件第7页 
STP55NF06L - STP55NF06LFP  
STB55NF06L - STB55NF06L-1  
N-CHANNEL 60V - 0.014- 55A TO-220/FP/D2PAK/I2PAK  
STripFET II POWER MOSFET  
TYPE  
V
R
DS(on)  
I
D
DSS  
STP55NF06L  
STP55NF06LFP  
STB55NF06L  
STB55NF06L-1  
60 V  
60 V  
60 V  
60 V  
<0.018 Ω  
<0.018 Ω  
<0.018 Ω  
<0.018 Ω  
55 A  
55 A  
55 A  
55 A  
3
3
2
2
1
1
TYPICAL R (on) = 0.014Ω  
DS  
TO-220  
TO-220FP  
EXCEPTIONAL dv/dt CAPABILITY  
APPLICATION ORIENTED  
CHARACTERIZATION  
3
1
3
2
1
DESCRIPTION  
2
2
D PAK  
This Power Mosfet is the latest development of  
STMicroelectronics unique “Single Feature  
Size strip-based process. The resulting tran-  
sistor shows extremely high packing density for  
low on-resistance, rugged avalance characteris-  
tics and less critical alignment steps therefore a re-  
markable manufacturing reproducibility.  
I PAK  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc.)  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
STP55NF06L  
STB55NF06L/-1  
STP55NF06LFP  
V
Drain-source Voltage (V  
= 0)  
GS  
60  
60  
V
V
V
A
A
A
W
DS  
V
Drain-gate Voltage (R = 20 k)  
DGR  
GS  
V
Gate- source Voltage  
± 16  
GS  
I
Drain Current (continuous) at T = 25°C  
55  
39  
30  
21  
D
C
I
Drain Current (continuous) at T = 100°C  
D
C
I
(l )  
Drain Current (pulsed)  
220  
95  
120  
30  
DM  
P
Total Dissipation at T = 25°C  
TOT  
C
Derating Factor  
0.63  
0.2  
W/°C  
V/ns  
mJ  
dv/dt (2)  
(1)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Insulation Withstand Voltage (DC)  
Storage Temperature  
20  
E
300  
AS  
V
-
2500  
V
ISO  
T
stg  
– 55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
(1) Starting T =25°C, I =27.5A, V =30V  
j
D
DD  
() Pulse width limited by safe operating area  
August 2002  
1/12  
(2) I 55 A, di/dt 200A/µs, V V  
, T T  
j JMAX.  
SD  
DD  
(BR)DSS  

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