是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
零件包装代码: | D2PAK | 包装说明: | SMALL OUTLINE, R-PSSO-G2 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.82 |
Is Samacsys: | N | 雪崩能效等级(Eas): | 200 mJ |
外壳连接: | DRAIN | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 24 V | 最大漏极电流 (Abs) (ID): | 50 A |
最大漏极电流 (ID): | 50 A | 最大漏源导通电阻: | 0.0135 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | JESD-609代码: | e0 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 175 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 60 W |
最大脉冲漏极电流 (IDM): | 200 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Tin/Lead (Sn/Pb) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STB50NH02LT4 | STMICROELECTRONICS |
获取价格 |
50A, 24V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | |
STB5105-MB/NS | STMICROELECTRONICS |
获取价格 |
Low-cost interactive set-top box decoder | |
STB5105-REF/C | STMICROELECTRONICS |
获取价格 |
Low-cost interactive set-top box decoder | |
STB55NE06 | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE | |
STB55NE06L | STMICROELECTRONICS |
获取价格 |
N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET | |
STB55NE06LT4 | STMICROELECTRONICS |
获取价格 |
55A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3 | |
STB55NE06T4 | STMICROELECTRONICS |
获取价格 |
55A, 60V, 0.022ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3 | |
STB55NF03L | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET | |
STB55NF03L-1 | STMICROELECTRONICS |
获取价格 |
N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET | |
STB55NF03LT4 | ETC |
获取价格 |
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 55A I(D) | TO-263AB |