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STB50NH02L PDF预览

STB50NH02L

更新时间: 2024-10-31 22:07:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
11页 416K
描述
N-CHANNEL 24V - 0.011ohm - 50A DPAK STripFET⑩ III POWER MOSFET

STB50NH02L 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.82
Is Samacsys:N雪崩能效等级(Eas):200 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:24 V最大漏极电流 (Abs) (ID):50 A
最大漏极电流 (ID):50 A最大漏源导通电阻:0.0135 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):60 W
最大脉冲漏极电流 (IDM):200 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STB50NH02L 数据手册

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STB50NH02L  
N-CHANNEL 24V - 0.011 - 50A D²PAK  
STripFET™ III POWER MOSFET  
V
DSS  
R
I
D
TYPE  
DS(on)  
STB50NH02L  
24 V  
< 0.0135 Ω  
50 A  
TYPICAL R (on) = 0.011 @ 10 V  
DS  
TYPICAL R (on) = 0.015 @ 5 V  
DS  
R
* Qg INDUSTRY’s BENCHMARK  
DS(ON)  
CONDUCTION LOSSES REDUCED  
SWITCHING LOSSES REDUCED  
3
1
LOW THRESHOLD DEVICE  
²
D PAK  
TO-263  
2
SURFACE-MOUNTING D PAK (TO-263)  
POWER PACKAGE IN TUBE (NO SUFFIX) OR  
IN TAPE & REEL (SUFFIX “T4”)  
(Suffix “T4”)  
DESCRIPTION  
The STB50NH02L utilizes the latest advanced design  
rules of ST’s proprietary STripFET™ technology. This is  
suitable fot the most demanding DC-DC converter  
applications where high efficiency is to be achieved.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
SPECIFICALLY DESIGNED AND OPTIMISED  
FOR HIGH EFFICIENCY DC/DC  
CONVERTERS  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
30  
Unit  
V
V
Drain-source Voltage Rating  
spike(1)  
V
Drain-source Voltage (V = 0)  
24  
V
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
24  
V
DGR  
GS  
V
Gate- source Voltage  
± 20  
50  
V
GS  
I
Drain Current (continuous) at T = 25°C  
A
D
C
I
D
Drain Current (continuous) at T = 100°C  
36  
A
C
(2)  
I
Drain Current (pulsed)  
200  
60  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
0.4  
200  
W/°C  
mJ  
(3)  
E
Single Pulse Avalanche Energy  
Storage Temperature  
AS  
T
stg  
-55 to 175  
°C  
T
Max. Operating Junction Temperature  
j
September 2003  
1/11  

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