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STB55NE06 PDF预览

STB55NE06

更新时间: 2024-10-31 22:18:35
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
8页 100K
描述
N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET

STB55NE06 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:D2PAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.19
Is Samacsys:N雪崩能效等级(Eas):200 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):55 A
最大漏极电流 (ID):55 A最大漏源导通电阻:0.022 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):130 W最大脉冲漏极电流 (IDM):220 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Tin/Lead (Sn/Pb)
端子形式:GULL WING端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STB55NE06 数据手册

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STB55NE06  
N - CHANNEL ENHANCEMENT MODE  
” SINGLE FEATURE SIZE ” POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STB55NE06  
60 V  
< 0.022 Ω  
55 A  
TYPICAL RDS(on) = 0.019 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
LOW GATE CHARGE 100 oC  
HIGH dv/dt CAPABILITY  
3
APPLICATION ORIENTED  
CHARACTERIZATION  
1
FOR THROUGH-HOLE VERSION CONTACT  
SALES OFFICE  
D2PAK  
TO-263  
(suffix ”T4”)  
DESCRIPTION  
This Power Mosfet is the latest development of  
SGS-THOMSON unique ”Single Feature Size”  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalance characteristics and  
less critical alignment steps therefore a remark-  
able manufacturingreproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
DC MOTOR CONTROL  
DC-DC & DC-AC CONVERTERS  
SYNCHRONOUS RECTIFICATION  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
Parameter  
Value  
60  
Unit  
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
Drain Current (continuous) at Tc = 25 oC  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
V
V
VDGR  
VGS  
ID  
60  
± 20  
55  
V
A
ID  
39  
A
I
DM()  
220  
A
Ptot  
Total Dissipation at Tc = 25 oC  
130  
W
Derating Factor  
0.96  
7
W/oC  
V/ns  
oC  
oC  
dv/dt  
Tstg  
Tj  
Peak Diode Recovery voltage slope  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
(1) ISD 55 A,di/dt 300 A/µs, VDD V(BR)DSS, T TJMAX  
j
1/8  
December 1997  

STB55NE06 替代型号

型号 品牌 替代类型 描述 数据表
RF1S50N06SM INTERSIL

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