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STB55NE06LT4 PDF预览

STB55NE06LT4

更新时间: 2024-11-01 14:31:15
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 86K
描述
55A, 60V, 0.028ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3

STB55NE06LT4 技术参数

是否Rohs认证: 不符合生命周期:Obsolete
零件包装代码:D2PAK包装说明:TO-263, D2PAK-3
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.8
其他特性:AVALANCHE RATED雪崩能效等级(Eas):200 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):55 A
最大漏极电流 (ID):55 A最大漏源导通电阻:0.028 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e0
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:175 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):130 W
最大脉冲漏极电流 (IDM):220 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Tin/Lead (Sn/Pb)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STB55NE06LT4 数据手册

 浏览型号STB55NE06LT4的Datasheet PDF文件第2页浏览型号STB55NE06LT4的Datasheet PDF文件第3页浏览型号STB55NE06LT4的Datasheet PDF文件第4页浏览型号STB55NE06LT4的Datasheet PDF文件第5页浏览型号STB55NE06LT4的Datasheet PDF文件第6页浏览型号STB55NE06LT4的Datasheet PDF文件第7页 
STB55NE06L  
2
N - CHANNEL 60V - 0.018- 55A D PAK  
STripFET  
POWER MOSFET  
TYPE  
VDSS  
RDS(on)  
ID  
STB55NE06L  
60 V  
< 0.022 Ω  
55A  
TYPICAL RDS(on) = 0.018 Ω  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
LOW GATE CHARGE 100 oC  
APPLICATIONORIENTED  
CHARACTERIZATION  
3
1
FOR THROUGH-HOLE VERSION CONTACT  
SALES OFFICE  
D2PAK  
TO-263  
(suffix ”T4”)  
DESCRIPTION  
This Power Mosfet is the latest development of  
SGS-THOMSON unique ”Single Feature Size ”  
strip-based process. The resulting transistor  
shows extremely high packing density for low  
on-resistance, rugged avalance characteristics  
and less critical alignment steps therefore a  
remarkable manufacturingreproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT (INJECTION,  
ABS, AIR-BAG, LAMPDRIVERS, Etc. )  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
VDS  
VDGR  
VGS  
ID  
Parameter  
Value  
60  
Unit  
V
Drain-source Voltage (VGS = 0)  
Drain- gate Voltage (RGS = 20 k)  
Gate-source Voltage  
60  
V
± 15  
55  
V
o
Drain Current (continuous) at Tc = 25 C  
Drain Current (continuous) at Tc = 100 oC  
Drain Current (pulsed)  
A
ID  
39  
A
I
DM()  
220  
A
o
Ptot  
Total Dissipation at Tc = 25 C  
130  
W
Derating Factor  
0.86  
7
W/oC  
V/ns  
oC  
oC  
dv/dt  
Tstg  
Tj  
Peak Diode Recovery voltage slope  
Storage Temperature  
-65 to 175  
175  
Max. Operating Junction Temperature  
() Pulse width limited by safe operating area  
( ) ISD 55 A, di/dt 300 A/µs, VDD V(BR)DSS, Tj TJMAX  
1
1/8  
June 2000  

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