Datasheet > STB55NF06FP

STB55NF06FP

更新时间： 2024-11-05 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
10页	121K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 60V V(BR)DSS \| 26A I(D) \| TO-220FP

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数据手册

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STB55NF06FP 数据手册

STP55NF06

STB55NF06-1 STP55NF06FP

N-CHANNEL 60V - 0.015 Ω - 50A TO-220/TO-220FP/I PAK

STripFET II POWER MOSFET

DS(on)

TYPE

DSS

STP55NF06

STB55NF06-1

STB55NF06FP

60 V

<0.018 Ω

50 A

26 A

■

TYPICAL R (on) = 0.015 Ω

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

APPLICATION ORIENTED

CHARACTERIZATION

I PAK

TO-220FP

TO-262

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique ”Single Feature Size

”

TO-220

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SWITCHING SPEED

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC & DC-AC CONVERTERS

AUTOMOTIVE ANVIRONMENT (INJECTION,

ABS, AIR-BAG, LAMPDRIVERS, Etc.)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP55NF06

STP55NF06FP

STB55NF06

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

± 20

Drain Current (continuous) at T = 25°C

Drain Current (continuous) at T = 100°C

(•)

Drain Current (pulsed)

200

110

0.73

104

Total Dissipation at T = 25°C

tot

Derating Factor

0.2

W/°C

V/ns

(1)

(2)

Peak Diode Recovery voltage slope

Single Pulse Avalanche Energy

Storage Temperature

dv/dt

350

stg

-55 to 175

°C

Operating Junction Temperature

(•) Pulse width limited by safe operating area.

(1) I ≤50A, di/dt ≤400A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX

(2) Starting T = 25 C, I = 25A, V = 30V

August 2002

1/10

12 3 4 5 6 7...10

中文翻译

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