Datasheet > STB50NE10LT4

STB50NE10LT4

更新时间： 2024-11-28 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管开关脉冲
页数	文件大小	规格书
6页	51K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 100V V(BR)DSS \| 50A I(D) \| TO-263AB

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STB50NE10LT4 数据手册

STB50NE10L

N-CHANNEL 100V - 0.020

Ω - 50A D PAK

STripFET POWER MOSFET

PRELIMINARY DATA

DS(on)

TYPE

DSS

STB50NE10L

100 V

<0.025 Ω

50 A

■

TYPICAL R (on) = 0.020Ω

EXCEPTIONAL dv/dt CAPABILITY

100% AVALANCHE TESTED

LOW GATE CHARGE 100 C

APPLICATION ORIENTED

CHARACTERIZATION

D PAK

TO-263

(suffix“T4”)

■

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

This Power Mosfet is the latest development of

STMicroelectronis unique ”Single Feature Size

”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalanche characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SOLENOID AND RELAY DRIVERS

MOTOR CONTROL, AUDIO AMPLIFIERS

DC-DC & DC-AC CONVERTERS

AUTOMOTIVE ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

100

±20

Unit

Drain-source Voltage (V = 0)

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

(•)

Drain Current (pulsed)

200

150

Total Dissipation at T = 25°C

tot

Derating Factor

W/°C

V/ns

°C

(1)

Peak Diode Recovery voltage slope

Storage Temperature

dv/dt

–65 to 175

175

stg

Max. Operating Junction Temperature

(1)

(•)Pulse width limited by safe operating area.

≤50A, di/dt ≤300A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX.

November 2000

1/6

This is preliminary data new product in development or undergoing evaluation. Details are subject to change without notice.

12 3 4 5 6

中文翻译

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