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STB50NE10LT4 PDF预览

STB50NE10LT4

更新时间: 2024-11-04 23:34:59
品牌 Logo 应用领域
其他 - ETC 晶体晶体管开关脉冲
页数 文件大小 规格书
6页 51K
描述
TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 50A I(D) | TO-263AB

STB50NE10LT4 数据手册

 浏览型号STB50NE10LT4的Datasheet PDF文件第2页浏览型号STB50NE10LT4的Datasheet PDF文件第3页浏览型号STB50NE10LT4的Datasheet PDF文件第4页浏览型号STB50NE10LT4的Datasheet PDF文件第5页浏览型号STB50NE10LT4的Datasheet PDF文件第6页 
STB50NE10L  
2
N-CHANNEL 100V - 0.020  
- 50A D PAK  
STripFET POWER MOSFET  
PRELIMINARY DATA  
V
R
DS(on)  
I
D
TYPE  
DSS  
STB50NE10L  
100 V  
<0.025 Ω  
50 A  
TYPICAL R (on) = 0.020Ω  
DS  
EXCEPTIONAL dv/dt CAPABILITY  
100% AVALANCHE TESTED  
o
LOW GATE CHARGE 100 C  
3
1
APPLICATION ORIENTED  
CHARACTERIZATION  
2
D PAK  
TO-263  
(suffix“T4”)  
FOR THROUGH-HOLE VERSION CONTACT  
SALES OFFICE  
DESCRIPTION  
This Power Mosfet is the latest development of  
STMicroelectronis unique ”Single Feature Size  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
less critical alignment steps therefore a remark-  
able manufacturing reproducibility.  
INTERNAL SCHEMATIC DIAGRAM  
APPLICATIONS  
HIGH CURRENT, HIGH SPEED SWITCHING  
SOLENOID AND RELAY DRIVERS  
MOTOR CONTROL, AUDIO AMPLIFIERS  
DC-DC & DC-AC CONVERTERS  
AUTOMOTIVE ENVIRONMENT  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
100  
100  
±20  
50  
Unit  
V
V
Drain-source Voltage (V = 0)  
DS  
GS  
V
Drain-gate Voltage (R = 20 k)  
V
DGR  
GS  
V
Gate- source Voltage  
V
GS  
I
Drain Current (continuos) at T = 25°C  
A
D
D
C
I
Drain Current (continuos) at T = 100°C  
35  
A
C
I
()  
Drain Current (pulsed)  
200  
150  
1
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
W/°C  
V/ns  
°C  
°C  
(1)  
Peak Diode Recovery voltage slope  
Storage Temperature  
6
dv/dt  
T
–65 to 175  
175  
stg  
T
Max. Operating Junction Temperature  
j
(1)  
()Pulse width limited by safe operating area.  
I
50A, di/dt 300A/µs, V V  
, T T  
(BR)DSS j JMAX.  
SD  
DD  
November 2000  
1/6  
This is preliminary data new product in development or undergoing evaluation. Details are subject to change without notice.  

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