Datasheet > STB4NC60T4

STB4NC60T4

更新时间： 2024-10-31 23:34:59

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
9页	157K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 4.2A I(D) \| TO-263AB

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STB4NC60T4 数据手册

STB4NC60

N-CHANNEL 600V - 1.8

Ω

- 4.2A D PAK

PowerMesh II MOSFET

TYPE

DS(on)

DSS

STB4NC60

600V

< 2.2Ω

4.2A

■

TYPICAL R (on) = 1.8Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARK

GATE CHARGE MINIMIZED

DESCRIPTION

D PAK

The PowerMESH II is the evolution of the first

generation of MESH OVERLAY . The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVERS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Drain-source Voltage (V = 0)

Value

600

±30

4.2

Unit

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuos) at T = 25°C

Drain Current (continuos) at T = 100°C

2.6

(●)

Drain Current (pulsed)

16.8

100

0.8

Total Dissipation at T = 25°C

TOT

Derating Factor

W/°C

V/ns

dv/dt(1)

Peak Diode Recovery voltage slope

Storage Temperature

3.5

stg

–65 to 150

°C

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

(1)I ≤4.2A, di/dt ≤300A/µs, V ≤ V

, T ≤ T

(BR)DSS j JMAX.

October 2001

1/9

12 3 4 5 6 7...9

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