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STB50N25M5 PDF预览

STB50N25M5

更新时间: 2024-11-01 12:29:19
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
14页 903K
描述
N-channel 250 V, 0.065 Ω, 28 A, MDmesh V Power MOSFET in DPAK package

STB50N25M5 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:D2PAK
包装说明:ROHS COMPLIANT, TO-263, D2PAK-3针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
风险等级:5.79Is Samacsys:N
雪崩能效等级(Eas):350 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:250 V最大漏极电流 (Abs) (ID):28 A
最大漏极电流 (ID):28 A最大漏源导通电阻:0.065 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-263AB
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):245极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):110 W最大脉冲漏极电流 (IDM):112 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STB50N25M5 数据手册

 浏览型号STB50N25M5的Datasheet PDF文件第2页浏览型号STB50N25M5的Datasheet PDF文件第3页浏览型号STB50N25M5的Datasheet PDF文件第4页浏览型号STB50N25M5的Datasheet PDF文件第5页浏览型号STB50N25M5的Datasheet PDF文件第6页浏览型号STB50N25M5的Datasheet PDF文件第7页 
STB50N25M5  
N-channel 250 V, 0.065 Ω, 28 A, MDmesh™ V Power MOSFET  
in D²PAK package  
Datasheet — production data  
Features  
RDS(on)  
max  
Type  
VDSS  
ID  
TAB  
STB50N25M5  
250 V  
< 0.075 Ω  
28 A  
Amongst the best RDS(on)* area  
High dv/dt capability  
3
1
Excellent switching performance  
Easy to drive  
PAK  
100% avalanche tested  
Application  
Switching applications  
Figure 1.  
Internal schematic diagram  
Description  
$ꢅꢆ OR 4!"ꢇ  
This device is an N-channel MDmesh™ V Power  
MOSFET based on an innovative proprietary  
vertical process technology, which is combined  
with STMicroelectronics’ well-known  
PowerMESH™ horizontal layout structure. The  
resulting product has extremely low on-  
'ꢅꢁꢇ  
resistance, which is unmatched among silicon-  
based Power MOSFETs, making it especially  
suitable for applications which require superior  
power density and outstanding efficiency.  
3ꢅꢈꢇ  
!-ꢀꢁꢂꢃꢄVꢁ  
Table 1.  
Order code  
STB50N25M5  
Device summary  
Marking  
Package  
PAK  
Packaging  
Tape and reel  
50N25M5  
March 2012  
Doc ID 15923 Rev 3  
1/14  
This is information on a product in full production.  
www.st.com  
14  

STB50N25M5 替代型号

型号 品牌 替代类型 描述 数据表
STB120N4F6 STMICROELECTRONICS

类似代替

N-channel 40 V, 3.5 mΩ , 80 A, DPAK, D²PAK

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