Datasheet > STB50N65DM6

STB50N65DM6

更新时间： 2024-11-02 14:58:03

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
14页	410K
描述
N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a D2PAK package

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技术参数
数据手册

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STB50N65DM6 技术参数

是否Rohs认证：	符合	生命周期：	Active
包装说明：	,	Reach Compliance Code：	compliant
Factory Lead Time：	16 weeks	风险等级：	5.76
Base Number Matches：	1

STB50N65DM6 数据手册

STB50N65DM6

Datasheet

N-channel 650 V, 74 mΩ typ., 33 A, MDmesh DM6 Power MOSFET in a D²PAK

package

Features

TAB

DS(on)

max.

Order code

STB50N65DM6

650 V

91 mΩ

33 A

•

Fast-recovery body diode

Lower R_DS(on)per area vs previous generation

D²

PAK

Low gate charge, input capacitance and resistance

100% avalanche tested

D(2, TAB)

Extremely high dv/dt ruggedness

Zener-protected

G(1)

Applications

•

Switching applications

S(3)

AM01476v1_tab

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-

recovery diode series. Compared with the previous MDmesh fast generation, DM6

combines very low recovery charge (Q_rr), recovery time (t_rr) and excellent

improvement in R_DS(on)per area with one of the most effective switching behaviors

available in the market for the most demanding high-efficiency bridge topologies and

ZVS phase-shift converters.

Product status link

STB50N65DM6

Product summary

Order code

Marking

STB50N65DM6

50N65DM6

D²PAK

Package

Packing

Tape and reel

DS13187 - Rev 2 - July 2020

For further information contact your local STMicroelectronics sales office.

www.st.com

12 3 4 5 6 7...14

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STB50NH02LT4	STMICROELECTRONICS	获取价格	50A, 24V, 0.0135ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, D2PAK-3