STB4NC80Z

更新时间： 2024-09-14 22:16:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
13页	527K
描述
N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH⑩III MOSFET

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数据手册

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STB4NC80Z 数据手册

STP4NC80Z - STP4NC80ZFP

STB4NC80Z - STB4NC80Z-1

N-CHANNEL 800V - 2.4Ω - 4A TO-220/FP/D²PAK/I²PAK

Zener-Protected PowerMESH™III MOSFET

TYPE

DSS

DS(on)

STP4NC80Z/FP

STB4NC80Z/-1

800V

< 2.8 Ω

4 A

■

TYPICAL R (on) = 2.4 Ω

D PAK

EXTREMELY HIGH dv/dt AND CAPABILITY

GATE-TO- SOURCE ZENER DIODES

100% AVALANCHE TESTED

VERY LOW GATE INPUT RESISTANCE

GATE CHARGE MINIMIZED

TO-220

TO-220FP

■

I PAK

DESCRIPTION

(Tabless TO-220)

The third generation of MESH OVERLAY™ Power

MOSFETs for very high voltage exhibits unsurpassed

on-resistance per unit area while integrating back-to-

back Zener diodes between gate and source. Such ar-

rangement gives extra ESD capability with higher rug-

gedness performance as requested by a large variety

of single-switch applications.

APPLICATIONS

■

SINGLE-ENDED SMPS IN MONITORS,

COMPUTER AND INDUSTRIAL APPLICATION

WELDING EQUIPMENT

■

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP(B)4NC80Z(-1) STP4NC80ZFP

Drain-source Voltage (V = 0)

800

± 25

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuos) at T = 25°C

4(*)

2.5(*)

16(*)

Drain Current (continuos) at T = 100°C

2.5

( )

●

Drain Current (pulsed)

Total Dissipation at T = 25°C

100

0.8

TOT

Derating Factor

0.28

W/°C

V/ns

Gate-source Current

±50

2.5

Gate source ESD(HBM-C=100pF, R=15KΩ)

Peak Diode Recovery voltage slope

Insulation Winthstand Voltage (DC)

Storage Temperature

ESD(G-S)

dv/dt(1)

ISO

2000

stg

–65 to 150

150

°C

Max. Operating Junction Temperature

(•)Pulse width limited by safe operating area

December 2002

(1)I ≤4A, di/dt ≤100A/µs, V ≤ V

, T ≤ T

j JMAX

(BR)DSS

(*)Pulse width Limited by maximum temperature allowed

1/13

12 3 4 5 6 7...13

中文翻译

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