生命周期: | Not Recommended | 零件包装代码: | D2PAK |
包装说明: | SMALL OUTLINE, R-PSSO-G2 | 针数: | 4 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.72 | Is Samacsys: | N |
雪崩能效等级(Eas): | 120 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (Abs) (ID): | 4 A |
最大漏极电流 (ID): | 4 A | 最大漏源导通电阻: | 2 Ω |
FET 技术: | METAL-OXIDE SEMICONDUCTOR | JEDEC-95代码: | TO-263AB |
JESD-30 代码: | R-PSSO-G2 | 元件数量: | 1 |
端子数量: | 2 | 工作模式: | ENHANCEMENT MODE |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | SMALL OUTLINE |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 70 W |
最大脉冲漏极电流 (IDM): | 16 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子形式: | GULL WING | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
STB4NK60Z_08 | STMICROELECTRONICS |
获取价格 |
N-channel 600 V - 1.76 ヘ - 4 A SuperMESH⑩ Pow | |
STB4NK60Z-1 | STMICROELECTRONICS |
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N-CHANNEL600V-1.76ohm-4ATO-220/FP/DPAK/IPAK/D | |
STB50N25M5 | STMICROELECTRONICS |
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N-channel 250 V, 0.065 Ω, 28 A, MDmesh V Pow | |
STB50N65DM6 | STMICROELECTRONICS |
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N-channel 650 V, 74 mOhm typ., 33 A MDmesh DM6 Power MOSFET in a D2PAK package | |
STB50NE08 | STMICROELECTRONICS |
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N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE | |
STB50NE08T4 | STMICROELECTRONICS |
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TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 50A I(D) | TO-263AB | |
STB50NE10 | STMICROELECTRONICS |
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N - CHANNEL 100V - 0.02ohm - 50A - D2PAK STripFET] POWER MOSFET | |
STB50NE10_06 | STMICROELECTRONICS |
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N-channel 100V - 0.021ヘ - 50A - D2PAK STripFE | |
STB50NE10L | STMICROELECTRONICS |
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N - CHANNEL 100V - 0.020ohm - 50A - D2PAK STripFET POWER MOSFET | |
STB50NE10LT4 | ETC |
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TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 50A I(D) | TO-263AB |