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2SK3296 PDF预览

2SK3296

更新时间: 2024-10-01 06:23:23
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关脉冲局域网
页数 文件大小 规格书
1页 45K
描述
MOS Field Effect Transistor

2SK3296 数据手册

  
SMD Type  
MOSFET  
MOS Field Effect Transistor  
2SK3296  
TO-263  
Unit: mm  
Features  
+0.2  
4.57  
-0.2  
4.5 V drive available  
Low on-state resistance  
+0.1  
1.27  
-0.1  
RDS(on)1 = 12m MAX. (VGS = 10 V, ID = 18 A)  
Low gate charge  
+0.1  
-0.1  
0.1max  
1.27  
QG = 30 nC TYP. (ID = 35 A, VDD = 16 V, VGS = 10 V)  
Built-in gate protection diode  
+0.1  
0.81  
-0.1  
2.54  
Surface mount device available  
1 Gate  
+0.2  
2.54  
-0.2  
+0.1  
5.08  
-0.1  
+0.2  
0.4  
-0.2  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
Unit  
V
20  
20  
Gate to source voltage  
V
A
35  
Drain current  
Idp *  
A
140  
1.5  
Power dissipation  
TA=25  
TC=25  
PD  
W
40  
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* PW 10 s,Duty Cycle 1%  
Electrical Characteristics Ta = 25  
Parameter  
Drain cut-off current  
Gate leakage current  
Gat cutoff voltage  
Symbol  
IDSS  
IGSS  
VGS(off)  
Testconditons  
VDS=20V,VGS=0  
Min  
Typ  
Max  
10  
Unit  
A
VGS= 20V,VDS=0  
VDS=10V,ID=1mA  
VDS=10V,ID=18A  
VGS=10V,ID=18A  
VGS=4.5V,ID=18A  
10  
A
1.0  
9.0  
2.5  
V
Forward transfer admittance  
S
Yfs  
8.5  
12  
12  
19  
m
Drain to source on-state resistance  
RDS(on)  
m
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Ciss  
Coss  
Crss  
ton  
tr  
1300  
570  
300  
70  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=10V,VGS=0,f=1MHZ  
1220  
100  
180  
ID=18A,VGS(on)=10V,RG=10 ,VDD=10V  
Turn-off delay time  
Fall time  
toff  
tf  
1
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