Datasheet > RM210N75T2

RM210N75T2

更新时间： 2024-10-15 18:09:35

品牌	Logo	应用领域
RECTRON		栅
页数	文件大小	规格书
7页	199K
描述
Vdss (V) : 75 V;Id @ 25C (A) : 210 A;Rds-on (typ) (mOhms) : 3.0 mOhms;Total Gate Charge (nQ) typ : 250 nQ;Maximum Power Dissipation (W) : 330 W;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 11000 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

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RM210N75T2 数据手册

RM210N75T2

N-Channel Enhancement Mode Power MOSFET

Description

The RM210N75T2 uses advanced trench technology and

design to provide excellent R_DS(ON)with low gate charge. It can

be used in Automotive applications and a wide variety of other

applications.

General Features

ƽ V_DSS=75V,I_D=210A

R_DS(ON)< 4mΩ @ V_GS=10V

ƽ Good stability and uniformity with high E_AS

ƽ Special process technology for high ESD capability

ƽ High density cell design for ultra low Rdson

ƽ Fully characterized avalanche voltage and current

ƽ Excellent package for good heat dissipation

Schematic diagram

Application

ƽꢀAutomotive applications

ƽꢀHard switched and high frequency circuits

ƽꢀUninterruptible power supply

Halogen-free

TO-220-3L top view

100% UIS TESTED!

100% ∆Vds TESTED!

Package Marking and Ordering Information

Device Marking

Device

Device Package

Reel Size

Tape width

Quantity

210N75

RM210N75T2

TO-220-3L

-ꢀ

Absolute Maximum Ratings (T_C=25ćunless otherwise noted)

Parameter

Symbol

V^DSS

V^GS

Limit

Unit

Drain-Source Voltage

Gate-Source Voltage

Drain Current-Continuous

210

150

I_D

Drain Current-Continuous(T_C=100ć)

Pulsed Drain Current

I_D(100ć)

840

I_DM

Maximum Power Dissipation

330

P_D

Derating factor

2.2

W/ć

Single pulse avalanche energy (Note 4)

Operating Junction and Storage Temperature Range

E_AS

2200

-55 To 175

T_J,T_STG

2019-08/15

REV:O

12 3 4 5 6 7

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