5秒后页面跳转
RM210N75T2 PDF预览

RM210N75T2

更新时间: 2024-10-02 18:09:35
品牌 Logo 应用领域
RECTRON
页数 文件大小 规格书
7页 199K
描述
Vdss (V) : 75 V;Id @ 25C (A) : 210 A;Rds-on (typ) (mOhms) : 3.0 mOhms;Total Gate Charge (nQ) typ : 250 nQ;Maximum Power Dissipation (W) : 330 W;Vgs(th) (typ) : 3.0 V;Input Capacitance (Ciss) : 11000 pF;Polarity : N-Channel;Mounting Style : Through Hole;Package / Case : TO-220

RM210N75T2 数据手册

 浏览型号RM210N75T2的Datasheet PDF文件第2页浏览型号RM210N75T2的Datasheet PDF文件第3页浏览型号RM210N75T2的Datasheet PDF文件第4页浏览型号RM210N75T2的Datasheet PDF文件第5页浏览型号RM210N75T2的Datasheet PDF文件第6页浏览型号RM210N75T2的Datasheet PDF文件第7页 
RM210N75T2  
N-Channel Enhancement Mode Power MOSFET  
Description  
The RM210N75T2 uses advanced trench technology and  
design to provide excellent RDS(ON) with low gate charge. It can  
be used in Automotive applications and a wide variety of other  
applications.  
General Features  
ƽ VDSS =75V,ID =210A  
RDS(ON) < 4mΩ @ VGS=10V  
ƽ Good stability and uniformity with high EAS  
ƽ Special process technology for high ESD capability  
ƽ High density cell design for ultra low Rdson  
ƽ Fully characterized avalanche voltage and current  
ƽ Excellent package for good heat dissipation  
Schematic diagram  
Application  
ƽꢀAutomotive applications  
ƽꢀHard switched and high frequency circuits  
ƽꢀUninterruptible power supply  
Halogen-free  
TO-220-3L top view  
100% UIS TESTED!  
100% ∆Vds TESTED!  
Package Marking and Ordering Information  
Device Marking  
Device  
Device Package  
Reel Size  
Tape width  
Quantity  
210N75  
RM210N75T2  
TO-220-3L  
-  
-
-ꢀ  
Absolute Maximum Ratings (TC=25ćunless otherwise noted)  
Parameter  
Symbol  
VDSS  
VGS  
Limit  
75  
Unit  
V
Drain-Source Voltage  
Gate-Source Voltage  
Drain Current-Continuous  
20  
V
210  
150  
A
ID  
Drain Current-Continuous(TC=100ć)  
Pulsed Drain Current  
ID (100ć)  
A
840  
A
IDM  
Maximum Power Dissipation  
330  
W
PD  
Derating factor  
2.2  
W/ć  
mJ  
ć
Single pulse avalanche energy (Note 4)  
Operating Junction and Storage Temperature Range  
EAS  
2200  
-55 To 175  
TJ,TSTG  
2019-08/15  
REV:O  

与RM210N75T2相关器件

型号 品牌 获取价格 描述 数据表
RM211C ETC

获取价格

Logic IC
RM211D ETC

获取价格

Logic IC
RM212C ETC

获取价格

Logic IC
RM212D ETC

获取价格

Logic IC
RM213C ETC

获取价格

Logic IC
RM213D ETC

获取价格

Logic IC
RM214C ETC

获取价格

Logic IC
RM214D ETC

获取价格

Logic IC
RM215C ETC

获取价格

Logic IC
RM215D ETC

获取价格

Logic IC