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2SB799

更新时间: 2024-10-01 06:24:03
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管放大器
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描述
PNP Silicon Epitaxial Transistor

2SB799 数据手册

  
SMD Type  
Transistors  
PNP Silicon Epitaxial Transistor  
2SB799  
Features  
World standard miniature package:SOT-89  
Low collector saturation voltage:VCE(sat)<-0.4V(IC=-500mA,IB=-50mA)  
Absolute Maximum Ratings Ta = 25  
Parameter  
Collector to base voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Rating  
Unit  
V
-60  
Collector to emitter voltage  
Emitter to base voltage  
Collector current  
-50  
V
-5  
-0.7  
V
A
Collector current(Pulse) *  
Total power dissipation  
Junction temperature  
Storage temperature range  
IC  
-1.0  
A
PT  
2
W
Tj  
150  
Tstg  
-55 to +150  
* PW 10ms,duty cycle 50%.  
Electrical Characteristics Ta = 25  
Parameter  
Collector cutoff current  
Emitter cutoff current  
Symbol  
ICBO  
Testconditons  
Min  
Typ  
Max  
-100  
-100  
400  
Unit  
nA  
VCB = -60 V, IE = 0  
IEBO  
VEB = -5.0 V, IC = 0  
nA  
VCE = -1.0 V, IC = -100 mA  
VCE = -1.0 V, IC = -500 mA  
90  
50  
200  
120  
DC current gain *  
hFE  
Collector saturation voltage *  
Base saturation voltage *  
Base-emitter voltage *  
Gain bandwidth product  
Output capacitance  
VCE(sat) IC = -500mA, IB = -50mA  
VBE(sat) IC = -500mA, IB = -50mA  
-0.16 -0.4  
-0.9 -1.2  
V
V
VBE  
fT  
VCE = -6.0 V, IC = -10 mA  
VCE = -6.0 V, IE = 10 mA  
-600 -630 -700  
mV  
MHz  
pF  
120  
25  
Cob  
VCB = -6.0 V, IE = 0 , f = 1.0 MHz  
* Pulsed: PW  
350 ìs, duty cycle  
2%  
hFE Classification  
Marking  
hFE  
MM  
90 180  
ML  
135 270  
MK  
200 400  
1
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