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2SK2110

更新时间: 2024-10-01 06:23:31
品牌 Logo 应用领域
科信 - KEXIN 晶体晶体管开关
页数 文件大小 规格书
1页 46K
描述
MOS Field Effect Transistor

2SK2110 数据手册

  
SMD Type  
MOSFET  
MOS Field Effect Transistor  
2SK2110  
SOT-89  
Unit: mm  
+0.1  
4.50  
-0.1  
+0.1  
1.50  
-0.1  
Features  
+0.1  
1.80  
-0.1  
Low on-resistance  
RDS(on)=1.5 MAX.@VGS=4.0V,ID=0.3A  
High switching speed  
3
0.53  
2
1
+0.1  
0.48  
-0.1  
+0.1  
-0.1  
+0.1  
0.44  
-0.1  
1 Gate  
+0.1  
3.00  
-0.1  
2 Drain  
3 Source  
Absolute Maximum Ratings Ta = 25  
Parameter  
Drain to source voltage  
Symbol  
VDSS  
VGSS  
ID  
Rating  
100  
Unit  
V
Gate to source voltage  
V
20  
A
0.5  
Drain current  
Idp  
A
1.0  
Power dissipation  
*
PD  
2.0  
W
Channel temperature  
Storage temperature  
Tch  
150  
Tstg  
-55 to +150  
* 16 cm2X0.7mm,ceramic substrate used  
Electrical Characteristics Ta = 25  
Parameter  
Drain cut-off current  
Symbol  
IDSS  
IGSS  
VGS(th) VDS=10V,ID=1mA  
Testconditons  
Min  
Typ  
1.5  
Max  
1.0  
10  
Unit  
A
VDS=100V,VGS=0  
Gate leakage current  
Gate threshold voltage  
Forward transfer admittance  
nA  
V
VGS= 20V,VDS=0  
0.8  
0.4  
2.0  
VDS=10V,ID=0.3A  
VGS=4.0V,ID=0.3A  
VGS=10V,ID=0.3A  
S
Yfs  
0.95  
0.82  
100  
38  
1.5  
1.2  
Drain to source on-state resistance  
RDS(on)  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
Ciss  
Coss  
Crss  
td(on)  
tr  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
VDS=10V,VGS=0,f=1MHZ  
10  
2
1.3  
38  
ID=0.3A,VGS(on)=10V,RL=83 ,RG=10  
,VDD=25V  
Turn-off delay time  
Fall time  
td(off)  
tf  
13  
Marking  
Marking  
NT  
1
www.kexin.com.cn  

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