型号 | 品牌 | 获取价格 | 描述 | 数据表 |
2SK2111 | TYSEMI |
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Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed | |
2SK2111 | NEC |
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N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | |
2SK2111 | KEXIN |
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MOS Field Effect Transistor | |
2SK2112 | KEXIN |
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MOS Field Effect Transistor | |
2SK2112 | NEC |
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N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING | |
2SK2112 | TYSEMI |
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Low on-resistance RDS(on)=1.2 MAX. VGS=4.0V,ID=0.5A High switching speed | |
2SK2112-AZ | NEC |
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Power Field-Effect Transistor, 1A I(D), 100V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal | |
2SK2113 | ETC |
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2SK2113YY | RENESAS |
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RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Ch | |
2SK2113YY-TL | RENESAS |
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RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Ch |