Datasheet > 2SK2110

2SK2110

更新时间： 2024-09-13 06:23:31

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关
页数	文件大小	规格书
1页	46K
描述
MOS Field Effect Transistor

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中文翻译

获取价格

数据手册

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2SK2110 数据手册

SMD Type

MOSFICET

MOS Field Effect Transistor

2SK2110

SOT-89

Unit: mm

+0.1

4.50

-0.1

+0.1

1.50

-0.1

Features

+0.1

1.80

-0.1

Low on-resistance

R^DS(on)=1.5 MAX.@VGS=4.0V,ID=0.3A

High switching speed

0.53

+0.1

0.48

-0.1

+0.1

-0.1

+0.1

0.44

-0.1

1 Gate

1. Source

1. Base

+0.1

3.00

-0.1

2 Drain

2. Drain

2. Collector

3 Source

3. Emiitter

3. Gate

Absolute Maximum Ratings Ta = 25

Parameter

Drain to source voltage

Symbol

V^DSS

V^GSS

I^D

Rating

100

Unit

Gate to source voltage

0.5

Drain current

I^dp

1.0

Power dissipation

P^D

2.0

Channel temperature

Storage temperature

T^ch

150

Tstg

-55 to +150

* 16 cm²X0.7mm,ceramic substrate used

Electrical Characteristics Ta = 25

Parameter

Drain cut-off current

Symbol

I^DSS

I^GSS

V^GS(th)VDS=10V,ID=1mA

Testconditons

Min

Typ

1.5

Max

1.0

Unit

VDS=100V,VGS=0

Gate leakage current

Gate threshold voltage

Forward transfer admittance

VGS= 20V,VDS=0

0.8

0.4

2.0

VDS=10V,ID=0.3A

V^GS=4.0V,ID=0.3A

VGS=10V,ID=0.3A

Yfs

0.95

0.82

100

1.5

1.2

Drain to source on-state resistance

R^DS(on)

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Ciss

C^oss

C^rss

t^d(on)

V^DS=10V,VGS=0,f=1MHZ

1.3

I^D=0.3A,VGS(on)=10V,RL=83 ,RG=10

,VDD=25V

Turn-off delay time

Fall time

t^d(off)

Marking

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与2SK2110相关器件

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2SK2111	TYSEMI	获取价格	Low on-resistance RDS(on)=0.6 MAX.VGS=4.0V,ID=0.5A High switching speed
2SK2111	NEC	获取价格	N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
2SK2111	KEXIN	获取价格	MOS Field Effect Transistor
2SK2112	KEXIN	获取价格	MOS Field Effect Transistor
2SK2112	NEC	获取价格	N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
2SK2112	TYSEMI	获取价格	Low on-resistance RDS(on)=1.2 MAX. VGS=4.0V,ID=0.5A High switching speed
2SK2112-AZ	NEC	获取价格	Power Field-Effect Transistor, 1A I(D), 100V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal
2SK2113	ETC	获取价格
2SK2113YY	RENESAS	获取价格	RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Ch
2SK2113YY-TL	RENESAS	获取价格	RF Small Signal Field-Effect Transistor, Ultra High Frequency Band, Gallium Arsenide, N-Ch