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FDMC3612 PDF预览

FDMC3612

更新时间: 2024-10-02 18:09:31
品牌 Logo 应用领域
科信 - KEXIN /
页数 文件大小 规格书
6页 2395K
描述
N-Channel MOSFET

FDMC3612 数据手册

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SMD Type  
MOSFET  
N-Channel MOSFET  
FDMC3612 (KDMC3612)  
DFN 3X3  
Features  
Top  
VDS (V) = 100V  
8
7
6
5
ID = 12A  
RDS(ON) 110mΩ (VGS = 10V)  
RDS(ON) 122mΩ (VGS = 6V)  
Low Profile - 1 mm max in Power 33  
Bottom  
D
D
D
D
1
2
3
4
4
3
2
1
G
S
S
S
D
D
D
D
5
6
7
8
G
S
S
S
Absolute Maximum Ratings Ta = 25℃  
Parameter  
Drain-Source Voltage  
Symbol  
Rating  
100  
±20  
16  
Unit  
V
V
DS  
GS  
Gate-Source Voltage  
V
Tc=25(Package limited)  
Tc=25(Silicon limited)  
Ta=25(Note.1)  
Continuous Drain Current -Continuous  
12  
I
D
A
3.3  
15  
Continuous Drain Current -Pulsed  
Single Pulse Avalanche Energy  
Power Dissipation  
(Note.2)  
E
AS  
32  
mJ  
W
35  
Tc=25℃  
P
D
2.3  
53  
Ta=25(Note.1)  
Thermal Resistance.Junction- to-Ambient (Note.1)  
Thermal Resistance.Junction- to-Case  
Junction Temperature  
RthJA  
/W  
RthJC  
3.5  
150  
T
J
Storage Temperature Range  
Tstg  
-55 to 150  
2
Note.1: 53 °C/W when mounted on a 1 in pad of 2 oz copper  
Note.2: Starting TJ = 25 °C; N-ch: L = 1 mH, IAS = 8 A, VDD = 90 V, VGS = 10 V.  
1
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