Datasheet > STB4NC60-1

STB4NC60-1

更新时间： 2024-10-31 22:16:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
10页	357K
描述
N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220FP/I2PAK PowerMesh⑩II MOSFET

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STB4NC60-1 数据手册

STP4NC60 - STP4NC60FP

STB4NC60-1

N-CHANNEL 600V - 1.8Ω - 4.2A TO-220/TO-220FP/I PAK

PowerMesh™II MOSFET

TYPE

DSS

DS(on)

STP4NC60

STP4NC60FP

STB4NC60-1

600V

< 2.2Ω

4.2A

■

TYPICAL R (on) = 1.8Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

NEW HIGH VOLTAGE BENCHMARK

GATE CHARGE MINIMIZED

TO-220

TO-220FP

DESCRIPTION

I PAK

The PowerMESH™II is the evolution of the first

generation of MESH OVERLAY™. The layout re-

finements introduced greatly improve the Ron*area

figure of merit while keeping the device at the lead-

ing edge for what concerns swithing speed, gate

charge and ruggedness.

(Tabless TO-220)

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVERS

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STP(B)4NC60(-1) STP4NC60FP

Drain-source Voltage (V = 0)

600

±30

Drain-gate Voltage (R = 20 kΩ)

DGR

Gate- source Voltage

Drain Current (continuos) at T = 25°C

4.2

2.6

16.8

100

0.8

3.5

4.2(*)

2.6(*)

16.8(*)

Drain Current (continuos) at T = 100°C

( )

Drain Current (pulsed)

Total Dissipation at T = 25°C

TOT

Derating Factor

0.28

3.5

W/°C

V/ns

dv/dt(1)

Peak Diode Recovery voltage slope

Insulation Withstand Voltage (DC)

Storage Temperature

ISO

2500

stg

–65 to 150

°C

Max. Operating Junction Temperature

(*)Limited only by maximum Temperature allowed

(•)Pulse width limited by safe operating area

(1)I ≤4.2A, di/dt ≤300A/µs, V ≤ V

, T ≤ T

j JMAX.

(BR)DSS

April 2003

1/10

12 3 4 5 6 7...10

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