Datasheet > STB4NB80

STB4NB80

更新时间： 2024-09-12 22:16:27

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
6页	56K
描述
N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

STB4NB80 数据手册

STB4NB80

N - CHANNEL 800V - 3Ω - 4A - TO-220/TO-220FP

PowerMESH MOSFET

PRELIMINARY DATA

TYPE

V_DSS

R_DS(on)

I_D

STB4NB80

STB4NB80FP

800 V

3.3 Ω

4 A

■

TYPICAL R_DS(on)= 3 Ω

EXTREMELY HIGH dv/dt CAPABILITY

100% AVALANCHE TESTED

VERY LOW INTRINSIC CAPACITANCES

GATE CHARGE MINIMIZED

DESCRIPTION

D²PAK

TO-263

I²PAK

TO-262

(Suffix "-1")

Using the latest high voltage MESH OVERLAY

process, SGS-Thomson has designed an

advanced family of power MOSFETs with

outstanding performances. The new patent

pending strip layout coupled with the Company’s

proprietary edge termination structure, gives the

lowest RDS(on) per area, exceptional avalanche

and dv/dt capabilities and unrivalled gate charge

and switching characteristics.

(Suffix "T4")

INTERNAL SCHEMATIC DIAGRAM

APPLICATIONS

■

HIGH CURRENT, HIGH SPEED SWITCHING

SWITCH MODE POWER SUPPLIES (SMPS)

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

STB4NB80FP

Unit

STB4NB80

V_DS

V_DGR

V_GS

I_D

Drain-source Voltage (V_GS= 0)

Drain- gate Voltage (R_GS= 20 kΩ)

Gate-source Voltage

800

± 30

W/^oC

V/ns

Drain Current (continuous) at T_c= 25 C

2.4

100

4(*)

2.4(*)

I_D

Drain Current (continuous) at T_c= 100 C

I_DM(•)

P_tot

Drain Current (pulsed)

Total Dissipation at T_c= 25 C

Derating Factor

0.28

4.5

dv/dt(1) Peak Diode Recovery voltage slope

4.5

V_ISO

T_stg

T_j

Insulation Withstand Voltage (DC)

Storage Temperature

2000

-65 to 150

150

^oC

Max. Operating Junction Temperature

(•) Pulse width limited by safe operating area

(1) I_SD≤4 A, di/dt ≤ 200 A/µs, V_DD≤ V_(BR)DSS, Tj ≤ T_JMAX

(*) Limited only by maximum temperature allowed

1/6

June 1998

12 3 4 5 6

中文翻译

下载PDF

与STB4NB80相关器件

型号	品牌	获取价格	描述	数据表
STB4NB80-1	STMICROELECTRONICS	获取价格	暂无描述
STB4NB80FP	STMICROELECTRONICS	获取价格	N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET
STB4NB80FPT4	STMICROELECTRONICS	获取价格	4A, 800V, 3.3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263, D2PAK-3
STB4NB80T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 800V V(BR)DSS \| 4A I(D) \| TO-263AB
STB4NC50	STMICROELECTRONICS	获取价格	N-CHANNEL 500V - 2.2ohm - 4A D2PAK PowerMesh⑩
STB4NC60	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMes
STB4NC60-1	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220F
STB4NC60A-1	STMICROELECTRONICS	获取价格	N-CHANNEL 600V - 1.8ohm - 4.2A TO-220/TO-220F
STB4NC60T4	ETC	获取价格	TRANSISTOR \| MOSFET \| N-CHANNEL \| 600V V(BR)DSS \| 4.2A I(D) \| TO-263AB
STB4NC80Z	STMICROELECTRONICS	获取价格	N-CHANNEL 800V - 2.4ohm - 4A TO-220/FP/D2PAK/