Datasheet > STD46P4LLF6

STD46P4LLF6

更新时间： 2024-11-28 14:57:43

品牌	Logo	应用领域
意法半导体 - STMICROELECTRONICS		/
页数	文件大小	规格书
16页	894K
描述
P沟道40 V、0.0125 Ohm典型值、46 A STripFET F6功率MOSFET，DPAK封装

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STD46P4LLF6 数据手册

STD46P4LLF6

P-channel 40 V, 0.0125 Ω typ., StripFET™ F6

Power MOSFET in a DPAK package

Datasheet - production data



Very low on-resistance

Very low gate charge

High avalanche ruggedness

Low gate drive power loss

Applications



Switching applications

Description

Figure 1: Internal schematic diagram

This device is a P-channel Power MOSFET

developed using the STripFET™ F6 technology,

with a new trench gate structure. The resulting

Power MOSFET exhibits the lowest R_DS(on)in all

packages.

D(2, TAB)

Table 1: Device summary

Order codes

Marking Package Packaging

Tape and

G(1)

STD46P4LLF6 46P4LLF6

DPAK

reel

For the P-channel Power MOSFETs the

actual polarity of the voltages and the

current must be reversed.

S(3)

AM11258v1

Features

R_DS(on)

max.

Order codes

V_DSS

I_D

STD46P4LLF6

40 V

0.015 Ω

46 A

December 2014

DocID025772 Rev 3

1/16

www.st.com

This is information on a product in full production.

12 3 4 5 6 7...16

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