Datasheet > STD434S

STD434S

更新时间： 2024-01-16 08:54:26

品牌	Logo	应用领域
三合微科 - SAMHOP		晶体晶体管场效应晶体管
页数	文件大小	规格书
8页	234K
描述
N-Channel Logic Level Enhancement Mode Field Effect Transistor

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数据手册

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STD434S 数据手册

Green

Product

STU/D434S

Ver 1.0

S mHop Microelectronics Corp.

N-Channel Logic Level Enhancement Mode Field Effect Transistor

FEATURES

PRODUCT SUMMARY

Super high dense cell design for low RDS(ON).

RDS(ON) (mΩ) Max

VDSS

Rugged and reliable.

9.2 @ VGS=10V

TO-252 and TO-251 Package.

50A

40V

11.5 @ VGS=4.5V

STU SERIE

STD SERIE

2 2

TO 5 AA

)

(

P K

2 1 I

(

)

P K

ABSOLUTE MAXIMUM RATINGS T_A=25 C unless otherwise noted

)

(

Symbol

V_DS

Parameter

Units

Limit

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C=25 C

I_D

Drain Current-Continuous

T_C=70 C

I_DM

147

-Pulsed

Single Pulse Avalanche Energy

E_AS

T_C=25 C

P_D

Maximum Power Dissipation

T_C=70 C

Operating Junction and Storage

Temperature Range

-55 to 150

°C

T_J, T_STG

THERMAL CHARACTERISTICS

Thermal Resistance, Junction-to-Case ^a

°C/W

Thermal Resistance, Junction-to-Ambient

Details are subject to change without notice.

Nov,14,2008

www.samhop.com.tw

12 3 4 5 6 7 8

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