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STD45NF75T4 PDF预览

STD45NF75T4

更新时间: 2024-10-01 04:01:59
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS /
页数 文件大小 规格书
12页 473K
描述
N-CHANNEL 75V - 0.018 OHM -40A DPAK STripFETTMII POWER MOSFET

STD45NF75T4 技术参数

是否Rohs认证: 符合生命周期:Active
零件包装代码:TO-252AA包装说明:SMALL OUTLINE, R-PSSO-G2
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99Factory Lead Time:14 weeks
风险等级:1.69雪崩能效等级(Eas):500 mJ
外壳连接:DRAIN配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:75 V最大漏极电流 (Abs) (ID):40 A
最大漏极电流 (ID):40 A最大漏源导通电阻:0.024 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-252AA
JESD-30 代码:R-PSSO-G2JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:2工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):100 W最大脉冲漏极电流 (IDM):160 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:YES端子面层:Matte Tin (Sn) - annealed
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:30晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

STD45NF75T4 数据手册

 浏览型号STD45NF75T4的Datasheet PDF文件第2页浏览型号STD45NF75T4的Datasheet PDF文件第3页浏览型号STD45NF75T4的Datasheet PDF文件第4页浏览型号STD45NF75T4的Datasheet PDF文件第5页浏览型号STD45NF75T4的Datasheet PDF文件第6页浏览型号STD45NF75T4的Datasheet PDF文件第7页 
STD45NF75  
N-CHANNEL 75V - 0.018 -40A DPAK  
STripFET™ II POWER MOSFET  
V
DSS  
R
I
D
TYPE  
DS(on)  
STD45NF75  
75 V  
<0.024 Ω  
40 A(**)  
TYPICAL RDS(on) = 0.018 Ω  
100% AVALANCHE TESTED  
GATE CHARGE MINIMIZED  
SURFACE-MOUNTING DPAK (TO-252)  
POWER PACKAGE IN TAPE & REEL  
(SUFFIX “T4")  
3
1
DPAK  
TO-252  
(Suffix “T4”)  
DESCRIPTION  
This Power MOSFET is the latest development of  
STMicroelectronis unique "Single Feature Size™"  
strip-based process. The resulting transistor  
shows extremely high packing density for low on-  
resistance, rugged avalanche characteristics and  
INTERNAL SCHEMATIC DIAGRAM  
less critical alignment steps therefore  
remarkable manufacturing reproducibility.  
a
APPLICATIONS  
HIGH CURRENT, SWITCHING  
APPLICATIONS  
Ordering Information  
SALES TYPE  
MARKING  
PACKAGE  
PACKAGING  
STD45NF75T4  
D45NF75  
DPAK  
TAPE & REEL  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
75  
75  
V
DGR  
Drain-gate Voltage (R = 20 k)  
V
GS  
V
Gate- source Voltage  
± 20  
40  
V
GS  
I (**)  
D
Drain Current (continuous) at T = 25°C  
A
C
I
Drain Current (continuous) at T = 100°C  
30  
A
D
C
I
(•)  
Drain Current (pulsed)  
160  
100  
0.67  
20  
A
DM  
P
Total Dissipation at T = 25°C  
W
tot  
C
Derating Factor  
W/°C  
V/ns  
mJ  
(1)  
Peak Diode Recovery voltage slope  
Single Pulse Avalanche Energy  
Storage Temperature  
dv/dt  
(2)  
E
500  
AS  
T
stg  
-55 to 175  
°C  
T
Operating Junction Temperature  
j
(•) Pulse width limited by safe operating area.  
(1) I 40A, di/dt 800A/µs, V V  
, T T  
j JMAX  
SD  
DD  
(BR)DSS  
DD  
o
(2) Starting T = 25 C, I = 20 A, V = 40V  
(**) Current Limited by Package  
j
D
April 2004  
1/12  

STD45NF75T4 替代型号

型号 品牌 替代类型 描述 数据表
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