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STD3PS25-1 PDF预览

STD3PS25-1

更新时间: 2024-11-23 22:29:07
品牌 Logo 应用领域
意法半导体 - STMICROELECTRONICS 晶体晶体管功率场效应晶体管开关脉冲
页数 文件大小 规格书
10页 447K
描述
P-CHANNEL 250V - 2.1 OHM - 3A DPAK/IPAK MESH OVERLAY MOSFET

STD3PS25-1 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-251AA包装说明:IN-LINE, R-PSIP-T3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.66
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:250 V
最大漏极电流 (Abs) (ID):3 A最大漏极电流 (ID):3 A
最大漏源导通电阻:2.8 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-251AAJESD-30 代码:R-PSIP-T3
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE峰值回流温度(摄氏度):260
极性/信道类型:P-CHANNEL最大功率耗散 (Abs):45 W
最大脉冲漏极电流 (IDM):12 A认证状态:Not Qualified
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

STD3PS25-1 数据手册

 浏览型号STD3PS25-1的Datasheet PDF文件第2页浏览型号STD3PS25-1的Datasheet PDF文件第3页浏览型号STD3PS25-1的Datasheet PDF文件第4页浏览型号STD3PS25-1的Datasheet PDF文件第5页浏览型号STD3PS25-1的Datasheet PDF文件第6页浏览型号STD3PS25-1的Datasheet PDF文件第7页 
STD3PS25 - STD3PS25-1  
P-CHANNEL 250V - 2.1- 3A DPAK/IPAK  
MESH OVERLAY™ MOSFET  
TYPE  
V
DSS  
R
I
D
DS(on)  
STD3PS25  
STD3PS25-1  
250 V  
250 V  
< 2.8 Ω  
< 2.8 Ω  
3 A  
3 A  
TYPICAL R (on) = 2.1Ω  
DS  
3
3
2
100% AVALANCHE TESTED  
APPLICATION ORIENTED  
CHARACTERIZATION  
1
1
DPAK  
IPAK  
STANDARD OUTLINE FOR EASY  
AUTOMATED SURFACE MOUNT ASSEMBLY  
GATE-SOURCE ZENER DIODE  
DESCRIPTION  
INTERNAL SCHEMATIC DIAGRAM  
Using the latest high voltage MESH OVERLAY™  
process, STMicroelectronics has designed an ad-  
vanced family of power MOSFETs with outstanding  
performance. The new patented STrip layout cou-  
pled with the Company’s proprietary edge termina-  
tion structure, makes it suitable in coverters for  
lighting applications.  
APPLICATIONS  
CONSUMER  
LIGHTING  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Value  
250  
Unit  
V
V
DS  
Drain-source Voltage (V = 0)  
GS  
V
Drain-gate Voltage (R = 20 k)  
250  
V
DGR  
GS  
V
Gate- source Voltage  
±25  
V
GS  
I
Drain Current (continuous) at T = 25°C  
3
A
D
C
I
Drain Current (continuous) at T = 100°C  
1.9  
A
D
C
I
(1)  
Drain Current (pulsed)  
12  
A
DM  
P
TOT  
Total Dissipation at T = 25°C  
45  
W
C
Derating Factor  
0.36  
– 50 to 150  
150  
W/°C  
°C  
°C  
T
stg  
Storage Temperature  
T
Max. Operating Junction Temperature  
j
June 2003  
1/10  

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